Y2N655S SILICON-TOP | Alldatasheet
Document overview
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Technical content
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 Y2N 655S——60V 10A N-Channel MOSFET Power MOSFET (2 IN 1) General Features ProprietaryNew TrenchTechnology Ultra-low MillerCharge RDS(ON),typ.=43mΩ@VGS=10V LowGate ChargeMinimizeSwitchingLoss Fast RecoveryBody Diode
Applications
Highefficiency DC/DC Converters SynchronousRectification MotorDrive
Ordering Information
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device Part Number Package Marking Y2N 655S SOP-8 655 AbsoluteMaximumRatingsTA=25°C unless otherwisenoted Parameter Symbol Maximum Units Drain-SourceVoltage VDS 60 V Gate-SourceVoltage VGS ±20V V Continuous DrainCurrent TA=25°C ID 16.2 ATA=70°C 6.5 PulsedDrainCurrentC IDM 20 AvalancheenergyL=0.1mH C EAS,EAR 10 MJ PowerDissipationB TA=25℃ PD 31.3 WTA=70℃ 3.0 JunctionandStorageTemperatureRange TJ, TSTG -55to150 ℃ All d ata sheet.com
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 All d ata sheet.com
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 All d ata sheet.com
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 All d ata sheet.com
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 All d ata sheet.com
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 Order information: Order information Y 2 N/ 6 55 S () 公司商标代号 Company symbol 1：NIL ,2:2 MOS P: PMOS ，N:N MOS BVDSS：6—60V;10—100V;20— 200V；35—350V；40—400V RDS(on) ：55—55mΩ;38—38mΩ; 16—16mΩ D:DIP;S:SOP Special code All d ata sheet.com
厦门市硅兆光电科技有限公司 Xiamen Silicon-top opto electronics Co.,Ltd. www.siliconbillion.com REV1.0 July 2014 Dimension and PCB layout : All d ata sheet.com