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MOSFETs Silicon N-channel MOS (U-MOS -H) XPW6R30ANBXPW6R30ANBXPW6R30ANBXPW6R30ANB Start of commercial production 2019-11 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications

  • Automotive
  • Motor Drivers
  • Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit DSOP Advance(WF)M 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation
  1. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaaa = 25 = 25 = 25 = 25  unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature (Tc = 25  ) (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 6) (Note 2) (Note 3) (Note 4) (Note 5) (Note 5) Symbol VDSS VGSS ID IDP PD EAS IAS Tch Tstg Rating 100 ±20 135 132 3.0 0.96 137 175 -55 to 175 Unit V A W mJ A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: When the body or a connecting part of a semiconductor product is subjected to vibration, impact or stress in actual equipment, bonding fault or device destruction may result. Therefore, be sure to keep this in mind at the time of structural design. If a semiconductor product is subject to especially strong vibration, impact or stress, the package or chip may crack. If stress is applied to a semiconductor chip through the package, changes in the resistance of the chip may result due to piezoelectric effects, resulting in fluctuation in element characteristics. Furthermore, if a stress that does not instantly result in damage is applied continually for a long period of time, product deformation may result, causing defects such as disconnection or element failure. Thus, at the time of structural design, carefully consider vibration, impact and stress. 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation
  1. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Channel-to-case thermal impedance Channel-to-top-plate thermal impedance Channel-to-ambient thermal impedance Channel-to-ambient thermal impedance (Tc = 25  ) (t = 10 s) (t = 10 s) (Note 7) (Note 2) (Note 3) Symbol zth(ch-c) zth(ch-tp) zth(ch-a) zth(ch-a) Max 1.13 1.5 156 Unit  /W  /W  /W  /W Note 1: Ensure that the channel temperature does not exceed 175  . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 80 V, Tch = 25  (initial), L = 52.1 µH, RG = 25 Ω, IAS = 45 A Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note 6: Tc is defined as a temperature of the drain electrode. Note 7: A maximum of the Zth(ch-tp) measured at Toshiba's test environment is only used for reference. An area of the top-plate is shown in Figure 5.3. Be aware that the top-plate has the same electric potential as the sources; however, not intended for an electrode. Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation
  1. 6. 6. 6. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.5 mA VGS = 6 V, ID = 22.5 A VGS = 10 V, ID = 22.5 A Min 100 2.5 Typ. 6.3 5.3 Max ±10 3.5 9.5 6.3 Unit µA V mΩ Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss rg tr ton tf toff Test Condition VDS = 10 V, VGS = 0 V, f = 300 kHz See Fig. 6.2.1 Min Typ. 3240 200 1270 2.0 Max 4.0 Unit pF Ω ns ns VDD ≈ 50 V VGS = 0 V/ 10 V ID = 22.5 A RL = 2.2 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD ≈ 80 V, VGS = 10 V, ID = 45 A Min Typ. Max Unit nC Characteristics Reverse drain current (pulsed) Diode forward voltage (Note 8) Symbol IDRP VDSF Test Condition IDR = 45 A, VGS = 0 V Min Typ. Max 135 -1.2 Unit A V Note 8: Ensure that the channel temperature does not exceed 175  . 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation
  1. 7. 7. 7. MarkingMarkingMarkingMarking 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation
  1. 8. 8. 8. Characteristics Curves (Note)Characteristics Curves (Note)Characteristics Curves (Note)Characteristics Curves (Note) 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation

Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation

Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation

(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) (Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) (Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation

(Reference Values)(Reference Values)(Reference Values)(Reference Values) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation

Package DimensionsPackage DimensionsPackage DimensionsPackage Dimensions Unit: mm Weight: 0.088 g (typ.) Package Name(s) TOSHIBA: 2-5U1A Nickname: DSOP Advance(WF)M 2020-06-24 Rev.5.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation

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