XPD55008

PD55008 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V
• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55008 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s su- perior linearity performance makes it an ideal so- lution for car mobile radio. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55008 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55008 PD55008S XPD55008S ABSOLUTE MAXIMUM RATINGS (TCASE =2 5O C) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 40 V V GS Gate-Source Voltage ±20 V ID Drain Current 4 A PDISS Power Dissipation (@ Tc = 700C) 52.8 W Tj Max. Operating Junction Temperature 165 O C TSTG Storage Temperature -65 to 165 O C THERMAL DATA R th(j-c) Junction-Case Thermal Resistance 1.8 O C/W

Ω Zdl Ω 520 1.586 - j2.087 3.082 + j2.043 500 1.409 - j3.448 2.129 + j3.219 480 1.075 - j2.727 2.046 +j1.960 PIN CONNECTION SOURCE DRAINGATE SC15200 ELECTRICAL SPECIFICATION (TCASE =2 50C) STATIC Symbol Parameter Min. Typ. Max. Unit IDSS VGS =0V V DS =2 8V 1 µA IGSS VGS =2 0V V DS =0V 1 µA V GS(Q) VDS =1 0V I D = 150 mA 2.0 5.0 V VDS(ON) VGS =1 0V I D = 1.5 A 1.0 V gFS VDS =1 0V I D = 1.5 A 1.6 mho C ISS VGS =0V V DS = 12.5 V f = 1 MHz 58 pF C OSS VGS =0V V DS = 12.5 V f = 1 MHz 39 pF C RSS VGS =0V V DS = 12.5 V f = 1 MHz 2.6 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit POUT f = 500 MHz V DD = 12.5 V I DQ =1 5 0m A 8W G PS f = 500 MHz V DD = 12.5 V P OUT =8W I DQ = 150 mA 17 dB η D f = 500 MHz V DD = 12.5 V P OUT =8W I DQ = 150 mA 55 % LOAD Mismatch f = 500 MHz V DD = 15.5 V P OUT =8W I DQ = 150 mA ALL PHASE ANGLES 20:1 VSWR PD55008 Frequency MHz Zin Ω Zdl Ω 520 1.649 - j1.965 1.716 - j1.552 500 1.589 - j1.185 1.561 - j2.639 480 1.141 - j2.054 1.649 - j2.916 D S Typical Input Impedance Zin G ZDL Typical Drain Load Impedance SC13140 IMPEDANCE DATA

Capacitance vs. Drain Voltage 0 5 10 15 20 25 VDD, DRAIN VOLTAGE (V) 100 1000C, CAPACITANCES (pF) Ciss Coss Cr ss f= 1MHz Drain Current vs. Gate Voltage 123456789 VGS, GATE-SOURCE VOLTAGE (V ) 8Id, DRAIN CURRENT (A) VDS =1 0V Gate-Source vs. Case Temperature -25 0 25 50 75 100 Tc, CASE TEMPERATURE ( °C) 0.92 0.94 0.96 0.98 1.02 1.04 1.06VGS, GATE-SOURCE VOLTAGE(NORMALIZED) ID =.25A ID =.5 A ID =1 A ID =2 A ID =1 . 5 A VDS =1 0V TYPICAL PERFORMANCE

Output Power vs. Input Power Pin, INPUT POWER (W) 14Pout, OUTPUT POWER (W) VDD = 12.5 V IDQ = 150 mA

480 MHz 500 MHz

520 MHz

Power Gain vs. Output Power 02468 1 0 1 2 Pout, OUTPUT POWER (W) 22Pg, POWER GAIN (dB) VDD = 12.5 V IDQ = 150 mA

480 MHz

500 MHz

Drain Efficiency vs. Output Power 02468 1 0 1 2 Pout, OUTPUT POWER (W) 80Nd, DRAIN EFFICIENCY (%) VDD =12.5V IDQ = 150 mA Input Return Loss vs. Output Power 02468 1 0 1 2 Pout, OUTPUT POWER (W) -40 -30 -20 -10 Rtl, INPUT RETURN LOSS (dB)VDD = 12.5 V IDQ = 150mA Output Power vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) 12Pout, OUTPUT POWER (W) VDD =1 2 .5V Pin=21.7dBm Drain Efficiency vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) 70Nd, DRAIN EFFICIENCY (%) VDD = 12.5 V Pin= 21.7 dBm

Pout, OUTPUT POWER (W) 80Nd, DRAIN EFFICIENCY (%) VDD =1 2 . 5V IDQ = 150 mA 480MH z 500MH z Pin, INPUT POWER (W) 14Pout, OUTPUT POWER (W) VDD = 12.5V IDQ =15 0m A 480M H z 500M Hz 520MHz Output Power vs. Supply Voltage 9 1 01 11 21 31 41 5 VDD, SUPPLY VOLTAGE (V) 13Pout, OUTPUT POWER (W) Idq=15 0mA Pin =21 .7 dB m Drain Efficency vs. Supply Voltage 9 1 01 11 21 31 41 5 VDD, SUPPLY VOLTAGE (V) 70Nd, DRAIN EFFICIENCY (%) Idq= 150 mA P in =21 .7 dB m Output Power vs. Gate-Source Voltage 01234 VGS, GATE-SOURCE VOLTAGE (V) 12Pout, OUTPUT POWER (W) VDD = 12.5 V P in =21 .7 dB m Power Gain vs. Output Power 02468 1 0 1 2 1 4 Pout, OUTPUT POWER (W) 22Pg, POWER GAIN (dB) VDD = 12.5V IDQ =15 0m A 480M Hz 500M Hz 520M H z Drain Efficiency vs. Output Power Output Power vs. Input PowerPD55008S

Input Return Loss vs. Output Power 02468 1 0 1 2 Pout, OUTPUT POWER (W) -40 -30 -20 -10 Rtl, INPUT RETURN LOSS (dB) VDD = 12.5V IDQ =15 0m A 480MHz 500M Hz 520M H z Output Power vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) 12Pout, OUTPUT POWER (W) 480M Hz 500M H z 520MHz VDD =12 . 5V Pin=21 dBm Drain Efficiency vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) 70Nd, DRAIN EFFICIENCY (%) 480MHz 500MHz 520MHz VDD= 12.5V Pin=21dBm Output Power vs. Supply Voltage 9 1 01 11 21 31 41 5 VDD, SUPPLY VOLTAGE (V) 11Pout, OUTPUT POWER (W) 480MHz 500MHz 520M Hz Id q=150mA Pin =21dBm 520M Hz Drain Efficency vs. Supply Voltage 91 0 1 1 1 2 1 3 1 4 1 5 VDD, SUPPLY VOLTAGE (V) 60Nd, DRAIN EFFICIENCY (%) Idq=15 0 mA Pin = 21dB m Output Power vs. Gate-Source Voltage 01 234 VGS, GATE-SOURCE VOLTAGE (V) 12Pout, OUTPUT POWER (W) 480M Hz 500MHz 520MHz VDD= 12.5V Pin=21dBm TYPICAL PERFORMANCE

TEST CIRCUIT COMPONENT PART LIST B1,B2 SHORT FERRITT BEAD, FAIR RITE PRODUCTS (2743021446) R4 33K Ω , 1/8 W RESISTOR C1,C12 240pF, 100 mil CHIP CAPACITOR Z1 0.451” X 0.080” MICROSTRIP C2,C3,C10,C11 0 to 20 pF TRIMMER CAPACITOR Z2 1.005” X 0.080” MICROSTRIP C4 82pF, 100 mil CHIP CAP Z3 0.020” X 0.080” MICROSTRIP C5,C16 120pF, 100 mil CHIP CAP Z4 0.155” X 0.080” MICROSTRIP C6,C13 10µF, 50V ELECTROLYTIC CAPACITOR Z5,Z6 0.260” X 0.223” MICROSTRIP C7,C14 1.200pF mil CHIP CAP Z7 0.065” X 0.080” MICROSTRIP C8,C15 0.1 F, 100 mil CHIP CAP Z8 0.266” X 0.080” MICROSTRIP C9 30pF, 100 mil CHIP CAP Z9 1.113” X 0.080” MICROSTRIP L1 55.5 nH, TURN, COILCRAFT Z10 0.433” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT BOARD ROGER, ULTRA LAM 2000 R1 15 Ω , 0805 CHIP RESISTOR THK 0.030” εr = 2.55 R2 51 Ω , 1/2 W RESISTOR 2oz ED Cu 2 SIDES R3 10 Ω , 0805 CHIP RESISTOR

6.4 inches TEST CIRCUITTEST CIRCUIT TEST CIRCUIT PHOTOMASTER

PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA

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