PD54003-PD54003S STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

  • EXCELLENT THERMAL STABILITY
  • COMMON SOURCE CONFIGURATION
  • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
  • NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD5400 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54003’s su- perior linearity performance makes it an ideal so- lution for portable radio. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54003 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54003 PD54003S XPD54003S ABSOLUTE MAXIMUM RATINGS (TCASE =2 5O C) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 25 V V GS Gate-Source Voltage ±20 V ID Drain Current 4 A PDISS Power Dissipation (@ Tc = 700C) 52.8 W Tj Max. Operating Junction Temperature 165 0C TSTG Storage Temperature -65 to 165 0C THERMAL DATA R th(j-c) Junction-Case Thermal Resistance 1.8 0C/W

Ω Zdl Ω 520 1.534 - j2.104 2.524 + j2.369 500 1.209 - j2.451 3.192 + j3.147 480 1.400 - j3.986 2.805 + j2.724 PIN CONNECTION SOURCE DRAINGATE SC15200 ELECTRICAL SPECIFICATION (TCASE =2 50C) STATIC Symbol Parameter Min. Typ. Max. Unit IDSS VGS =0 V V DS =2 5V 1 µA IGSS VGS =2 0V V DS =0V 1 µA V GS(Q) VDS =1 0V I D =5 0m A 2.0 5.0 V VDS(ON) VGS =1 0V I D =1A 1.3 V gFS VDS =1 0V I D = 1 A 1.5 mho C ISS VGS =0 V V DS = 7.5 V f = 1 MHz 59 pF C OSS VGS =0 V V DS = 7.5 V f = 1 MHz 43 pF C RSS VGS =0 V V DS = 7.5 V f = 1 MHz 4.0 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit POUT f = 500 MHz V DD =7 . 5V I DQ =5 0m A 3W G PS f = 500 MHz V DD =7 . 5V P OUT =3W I DQ =5 0m A 12 dB η D f = 500 MHz V DD =7 . 5V P OUT =3W I DQ =5 0m A 55 % LOAD Mismatch f = 500 MHz V DD = 9.5 V P OUT =3W I DQ =5 0m A ALL PHASE ANGLES 20:1 VSWR PD54003 Frequency MHz Zin Ω Zdl Ω 520 1.993 - j1.098 2.564 + j0.656 500 1.553 - j1.251 2.661 + j0.139 480 2.245 - j0.077 3.436 + j1.013 D S Typical Input Impedance Zin G ZDL Typical Drain Load Impedance SC13140 IMPEDANCE DATA

Capacitance vs. Drain Voltage 05 1 0 1 5 VDD, DRAIN VOLTAGE (V) 100 1000C, CAPACITANCE (pF) f=1 M H z Ci ss Coss Crss Drain Current vs. Gate Voltage 123456789 VGS, GATE-SOURCE VOLTAGE (V) 8Id, DRAIN CURRENT(A) Vds=10V Gate-Source Voltage vs. Case Temperature - 2 50 2 55 07 5 1 0 0 Tc, CASE TEMPERATURE ( °C) 0.92 0.94 0.96 0.98 1.02 1.04 1.06VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Vds=10V ID =1. 5A ID =2 A ID =0 . 5A ID =0 . 2 5A ID =1A TYPICAL PERFORMANCE

Output Power vs. Input Power 0 0.1 0.2 0.3 0.4 Pin, INPUT POWER (W) 5Pout, OUTPUT POWER (W) 480MH z 500MHz 520M Hz Vdd=7.5V Idq=50m A Power Gain vs. Output Power 01234 Pout, OUTPU T POWER (W) 16Pg, POWER GAIN (dB) 480MHz 500MHz 520MHz Vdd=7.5V Idq=50m A Drain Efficiency vs. Output Power 01 234 Pout, OUTPUT POWER (W) 80Nd, DRAIN EFFICIENCY(%) 480MHz 500MHz 520MHz Vdd= 7.5 V Idq=50 mA Return Loss vs. Output Power 01234 Pout, OUTPUT POWER (W) -40 -30 -20 -10 Rtl, RETURN LOSS(dB) 480M Hz 500MHz520MHzVdd= 7.5 V Id q=50m A Output Power vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRE NT (mA) 2.9 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8Pout, OUTPUT POWER (W) 480M Hz 500MHz 520M Hz Pin=23.3dBm Vdd=7.5V Drain Efficiency vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRE NT (mA) 70Nd, DRAIN EFFICIENCY (%) 480M Hz 500MH z 520M Hz Pin= 23.3 dBm Vdd=7.5V TYPICAL PERFORMANCE PD54003

Output Power vs. Supply Voltage 56789 1 0 VDD, SUPP LY VOLTAGE (V) 1.5 2.5 3.5 4.5 5.5Pout, OUTPUT POWER (W) 480MHz 500M Hz 520M H z Pin=23.3dBm Idq=50 mA Drain Efficiency vs. Supply Voltage 56789 1 0 VDD, SUPPLY VOLTAGE (V) 70Nd, DRAIN EFFICIENCY(%) 480M Hz 500MHz 520M Hz Pin=23.3dBm Id q=50m A Output Power vs. Gate-Source Voltage 01 234 VGS, GATE- SOURCE VOLTAGE (V) 5Pout, OUTPUT POWER (W) 480MHz 500M H z 520M H z Pin =23.3dBm Vdd=7.5V Output Power vs. Input Power Pin, INPUT POWER (W) 5Pout, OUTPUT POWER (W) 480M H z 500MHz 520MHz Vdd= 7.5 V Idq=50 mA Power Gain vs. Output Power 01234 Pout, OUTPU T POWER (W) 16Pg, POWER GAIN (dB) 480MHz 500MH z 520MHz Vdd=7.5V Idq=50m A Drain Efficiency vs. Output Power 01 234 Pout, OUTPUT POWER (W) 70Nd, EFFICIENCY(%) 480M H z 500M H z 520M Hz Vdd=7.5 V Id q=50m A TYPICAL PERFORMANCE PD54003S

VDD, SUPPLY VOLTAGE (V) 6Pout, OUTPUT POWER (W) 480M H z 500M H z 520M Hz Pin=22dBm Id q=50m A Return Loss vs. Output Power 01234 Pout, OUTPU T POWER (W) -40 -30 -20 -10 Rtl, RETURN LOSS (dB) 480MH z 500MHz 520MH z Vdd=7.5V Idq=50m A Output Power vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURREN T(mA ) 2.6 2.7 2.8 2.9 3.1 3.2 3.3 3.4 3.5Pout, OUTPUT POWER (W) 480M Hz 500M Hz 520MHz Pin=22dBm Vdd=7.5 V Drain Efficency vs. Bias Current 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRE NT (mA) 60Nd, DRAIN EFFICIENCY(%) 480M Hz 500MHz 520MHz Pin =22dBm Vdd=7.5V TYPICAL PERFORMANCE Drain Efficency vs. Supply Voltage 56789 1 0 VDD, SUPPLY VOLTAGE (V) 70Nd, DRAIN EFFICIENCY(%) 480MHz 500MHz 520M Hz Pin=22dBm Id q=50m A Output Power vs. Supply Voltage Output Power vs. Gate-Source Voltage 0 1234 VGS, GATE-SOURCE VOLTAGE (V) 4Pout, OUTPUT POWER (W)

480 MHz

500 MHz

Pin = 22dBm Vdd = 7.5V

TEST CIRCUIT COMPONENT PART LIST B1,B2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446) R3 15 Ω , 0805 CHIP RESISTOR C1,C13 240pF, 100 mil CHIP CAPACITOR R4 33 K Ω , 1/8 W RESISTOR C2,C3,C4,C10, C11,C12 0 TO 20pF TRIMMER CAPACITOR Z1 0.175” X 0.080” MICROSTRIP C5 130pF, 100 mil CHIP CAP Z2 1.049” X 0.080” MICROSTRIP C6,C17 120pF, 100 mil CHIP CAP Z3 0.289” X 0.080” MICROSTRIP C7,C14 10µF, 50V ELECTROLYTIC CAPACITOR Z4 0.026” X 0.080” MICROSTRIP C8,C15 1,200pF, 100 mil CHIP CAPACITOR Z5 0.192” X 0.223” MICROSTRIP C9,C16 0.1 F, 100 mil CHIP CAPACITOR Z6,Z7 0.260” X 0.223” MICROSTRIP L1 55.5 Nh, 5 TURN, COILCRAFT Z8 0.064” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT Z9 0.334” X 0.080” MICROSTRIP R1 15 Ω, 0805 CHIP RESISTOR Z10 0.985” X 0.080” MICROSTRIP R2 1,0 K Ω, 1/8 W RESISTOR Z11 0.472” X 0.080” MICROSTRIP BOARD ROGER, ULTRA LAM 2000 THK 0.030”,εr = 2.55 2oz. ED Cu 2 SIDES.

6.4 inches 4 inches TEST CIRCUITTEST CIRCUIT TEST CIRCUIT PHOTOMASTER

PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA

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