XP6NA3R5H

XP6NA3R5H YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 3.5mΩ ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy6 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.8 ℃/W Rthj-a 62.5 ℃/W Pulsed Drain Current1 Drain Current, VGS @ 10V4(Package Limited) Drain Current, VGS @ 10V Parameter Total Power Dissipation3 69.4 Thermal Data Maximum Thermal Resistance, Junction-ambient (PCB mount)3 XP6NA3R5H +20 Drain Current, VGS @ 10V4(Silicon Limited) 105 Halogen-Free Product Parameter Drain-Source Voltage Gate-Source Voltage 202311211YAGEO 360 Rating -55 to 150 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -55 to 150 173 G D S AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S XP6NA3R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the lo w connection resistance. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 3.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=5V, ID=40A - 90 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge5 ID=40A - 62 99 nC Qgs Gate-Source Charge5 VDS=30V - 18 - nC Qgd Gate-Drain ("Miller") Charge5 VGS=10V - 17 - nC td(on) Turn-on Delay Time5 VDS=30V - 17 - ns tr Rise Time5 ID=40A - 73 - ns td(off) Turn-off Delay Time5 RG=6Ω -4 0- ns tf Fall Time5 VGS=10V - 90 - ns Ciss Input Capacitance5 VGS=0V - 3400 5440 pF Coss Output Capacitance5 VDS=50V - 560 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 30 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=40A, VGS=0V - - 1.3 V trr Reverse Recovery Time5 IS=40A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 35 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board 4.Package limitation current is 75A . 5.Guaranteed by design. 6.Starting Tj=25oC , VDD=30V , L=0.3mH , RG=25Ω , VGS=10V THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 200 300 400 0 3 6 9 12 15 18 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 9.0V 8.0V 7.0V V GS =6.0V 120 160 200 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V V GS =6.0V T C =150 o C 468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =40A T C =25 o C 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1000 2000 3000 4000 5000 6000 1 2 14 16 18 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =40A V DS =30V 0.1 100 1000 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 100 120 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 120 160 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V Limited by package

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Normalized BVDSS v.s. Junction Temperature 0 20 40 60 80 100 120 140 I D , Drain Current (A) RDS(ON) (m T j =25 o C 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 6NA3R5 YWWSSS

Package Outline : TO-252 Millimeters MIN NOM MAX A2 2.18 2.30 2.40 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 E3 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 －－ 1.25 L 0.90 1.34 1.78 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3EFIMT-G-v10 SYMBOLS ee D FB1 B C L

TO-252 FOOTPRINT： Draw No. M1-H3EFIMT-G-v10