XP6NA3R2MT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 3.28mΩ ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy5 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W 112 100 -55 to 150 350 Thermal Data -55 to 150 Rating Halogen-Free Product +20 202311211YAGEO Parameter Storage Temperature Range 69.4Total Power Dissipation 125 Total Power Dissipation3 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Pulsed Drain Current1 Drain Current, VGS @ 10V3 Operating Junction Temperature Range XP6NA3R2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK ® 5x6 D D D D G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 3.28 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=5V, ID=20A - 60 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge I D=20A - 62 99.2 nC Qgs Gate-Source Charge V DS=30V - 18 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 17 - nC td(on) Turn-on Delay Time V DS=30V - 18 - ns tr Rise Time I D=20A - 52 - ns td(off) Turn-off Delay Time R G=6Ω -4 2- ns tf Fall Time V GS=10V - 63 - ns Ciss Input Capacitance V GS=0V - 3400 5440 pF Coss Output Capacitance V DS=50V - 560 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 30 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=20A, VGS=0V, - 42 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 37 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 60oC/W at steady state. 4.Package limitation current is 100A . 5.Starting T j=25oC , VDD=30V , L=0.1mH , RG=25Ω, VGS=10V THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 150 200 250 300 350 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V GS =6.0V 120 150 180 210 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V V GS =6.0V T C =150 o C 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1000 2000 3000 4000 5000 1 2 14 16 18 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =30V 0.01 0.1 100 1000 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 100 120 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 120 160 200 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V Limited by package

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Normalized BVDSS v.s. Junction Temperature 0 20 40 60 80 100 120 140 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 100 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 6NA3R2 YWWSSS

A 0.90 1.10 1.30 b 0.33 0.41 0.51 C 0.254(Ref.) D1 4.80 4.90 5.10 D2 3.61 4.00 4.40 E 5.80 6.03 6.25 E1 (Ref.) 5.60 5.75 5.90 E2 (Ref.) 3.30 3.55 3.80 e H 0.35 － 0.90 L 0.35 0.55 0.75 L1 0.06 0.13 0.20 0° － 12° 1.All dimension are in millimeters. 2.Dimension does not include burrs and mold flash/protrusions. 3.The outline schematic is not to scale and slightly different from the actual product appearance. Draw No. M1-MT-8-EIFMRL-G-v08 Package Outline : PMPAK 5x6

1.27 BSC

α(Ref.) BACKSIDE VIEW b α(Reference) E1 E L1e H K L C A

(E-TYPE) PMPAK 5X6(E-TYPE) FOOTPRINT： Draw No. M1-MT-8-EIFMRL-G-v08