XP6N6R8ALJV YAGEO | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 6.8mΩ ▼ Fast Switching Characteristic ID 65A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a 110 ℃/W Operating Junction Temperature Range -55 to 150 202311221YAGEO Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient Storage Temperature Range Drain Current, VGS @ 10V 41 Pulsed Drain Current1 160 Total Power Dissipation 50 -55 to 150 Total Power Dissipation 1.13 Gate-Source Voltage + 20 Drain Current, VGS @ 10V 65 Parameter Rating Drain-Source Voltage 60 Halogen-Free Product G D S XP6N6R8AL series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251VS short lead package is preferred for all commercial- industrial through-hole applications without lead-cutted. TO-251VS(JV) GDS

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 6.8 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=5V, ID=30A - 40 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=20V, VDS=0V - - 100 nA Qg Total Gate Charge I D=30A - 47 75.2 nC Qgs Gate-Source Charge V DS=30V - 10.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 16 - nC td(on) Turn-on Delay Time V DS=30V - 12 - ns tr Rise Time I D=30A - 53 - ns td(off) Turn-off Delay Time R G=6Ω -3 7- ns tf Fall Time V GS=10V - 78 - ns Ciss Input Capacitance V GS=0V - 2100 3360 pF Coss Output Capacitance V DS=30V - 1040 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=30A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 23 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω, VGS=10V THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 240 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 8.0V 7.0V 6.0V V G = 5.0V 120 160 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 8.0V 7.0V 6.0V V G = 5.0V T C = 150o C 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V GS =10V 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Gate Charge Waveform Temperature 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 30A V DS =30V Q VG 10V QGS QGD QG Charge 1000 2000 3000 4000 5000 1 2 14 16 18 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 100 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A)

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Transfer Characteristics 0 1 02 03 04 05 06 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 100 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

Package Outline : TO-251VS Millimeters MIN NOM MAX A 6.30 6.55 6.80 B 4.90 5.20 5.50 C 6.80 7.30 7.80 D 3.35 3.50 3.65 e F 0.60 0.90 1.20 G 0.50 0.70 0.90 H 2.10 2.25 2.40 J 0.40 0.50 0.60 K 0.40 0.50 0.60 L 0.90 1.20 1.50 M 5.40 5.90 6.40 D1 0.90 1.35 1.80 SYMBOLS 2.30 REF. G e A M C F D B H J L K 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-JVS-G-v01

Draw No. M1-J3VS-G-v01 TO-251VS FOOTPRINT： 1.6mm 2.3mm 2.3mm 1mm