XP6C036M YAGEO | Alldatasheet
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 60V ▼ Low Gate Charge RDS(ON) 36mΩ ▼ Fast Switching Performance ID 3 6A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -60V RDS(ON) 72mΩ Description ID 3 -4.2A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 60 -60 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ 6 -4.2 A ID@TA=70℃ 4.7 -3.3 A IDM Pulsed Drain Current1 30 -30 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Halogen-Free Product 202312071YAGEO Parameter Thermal Data S1 G1 SO-8 XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications.
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V VGS=10V, ID=5A - - 36 m Ω VGS=4.5V, ID=3A - - 42 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=5A - 25 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=3A - 14 22.4 nC Qgs Gate-Source Charge V DS=30V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.5 - nC td(on) Turn-on Delay Time V DS=30V - 10 - ns tr Rise Time I D=1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 8- ns tf Fall Time V GS=10V - 10 - ns Ciss Input Capacitance V GS=0V - 1700 2720 pF Coss Output Capacitance V DS=30V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.5A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=5A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC RDS(ON) Static Drain-Source On-Resistance2
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V VGS=-10V, ID=-4A - - 72 m Ω VGS=-4.5V, ID=-3A - - 88 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-4A - 14 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-3A - 16 25.6 nC Qgs Gate-Source Charge V DS=-30V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 5.5 - nC td(on) Turn-on Delay Time V DS=-30V - 12 - ns tr Rise Time I D=-1A - 4 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 8- ns tf Fall Time V GS=-10V - 20 - ns Ciss Input Capacitance V GS=0V - 1860 2976 pF Coss Output Capacitance V DS=-30V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.5A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-4A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBE D HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. RDS(ON) Static Drain-Source On-Resistance2
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 3A T A = 25 o C 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =5A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =3 0V 1000 2000 3000 4000 1 2 14 16 18 1 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 0 1 02 03 04 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS = 10V 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =10V T j = -55 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -3 A T A =25 o C 0.2 0.6 1.0 1.4 1.8 2.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -4 A V G = - 10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = - 250uA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -3A V DS = -30V 800 1600 2400 3200 1 2 14 16 18 1 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 200 300 400 0 1 02 03 04 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 02468 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o CV DS = -10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA
Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence
Package Outline : SO-8 MIN NOM MAX 1.35 1.55 1.75 0.05 0.15 0.25 0.30 0.41 0.51 4.80 5.05 5.30 5.79 6.00 6.20 3.70 3.90 4.10 0.17 0.21 0.25 0.38 0.83 1.27 0° 4° 8° 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-M8-G-v03 B D E e SYMBOLS Millimeters A
1.27 TYP
F α G e B 5 6 7 8 D A E αG F
SO-8 FOOTPRINT： Draw No. M1-M8-G-v03