XP6C036AM YAGEO | Alldatasheet
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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 60V ▼ Low Gate Charge RDS(ON) 36mΩ ▼ Fast Switching Performance ID 3 5.5A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -60V RDS(ON) 90mΩ Description ID 3 -3.7A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 60 -60 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ 5.5 -3.7 A ID@TA=70℃ 4.6 -3.1 A IDM Pulsed Drain Current1 30 -20 A PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy5 mJ TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W 202401191YAGEO Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Parameter Thermal Data Halogen-Free Product 2.4 S1G1 S2 G2 SO-8 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications.
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V VGS=10V, ID=5A - - 36 m Ω VGS=4.5V, ID=3A - - 42 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.4 - 3 V gfs Forward Transconductance V DS=10V, ID=5A - 19 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=10V) Total Gate Charge 4 ID=5A - 33 53 nC Qg(VGS=4.5V) Total Gate Charge 4 VDS=30V 16 26 nC Qgs Gate-Source Charge4 -8- nC Qgd Gate-Drain ("Miller") Charge4 -6- nC td(on) Turn-on Delay Time4 VDS=30V - 11 - ns tr Rise Time4 ID=1A - 7 - ns td(off) Turn-off Delay Time4 RG=3.3Ω -3 0- ns tf Fall Time4 VGS=10V - 11 - ns Ciss Input Capacitance4 VGS=0V - 1820 2912 pF Coss Output Capacitance4 VDS=30V - 100 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 68 - pF Rg Gate Resistance f=1.0MHz - 0.8 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time4 IS=5A, VGS=0V - 22 - ns Qrr Reverse Recovery Charge4 dI/dt=100A/µs - 20 - nC RDS(ON) Static Drain-Source On-Resistance2
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V VGS=-10V, ID=-4A - - 90 m Ω VGS=-4.5V, ID=-3A - - 125 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1.4 - -3 V gfs Forward Transconductance V DS=-10V, ID=-4A - 8 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=-10V) Total Gate Charge 4 ID=-4A - 18 29 nC Qg(VGS=-4.5V) Total Gate Charge 4 VDS=-30V 9 15 nC Qgs Gate-Source Charge4 -4- nC Qgd Gate-Drain ("Miller") Charge4 - 3.5 - nC td(on) Turn-on Delay Time4 VDS=-30V - 11 - ns tr Rise Time4 ID=-1A - 5 - ns td(off) Turn-off Delay Time4 RG=3.3Ω -3 1- ns tf Fall Time4 VGS=-10V - 9 - ns Ciss Input Capacitance4 VGS=0V - 930 1488 pF Coss Output Capacitance4 VDS=-30V - 55 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 9 18 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time4 IS=-4A, VGS=0V - 16 - ns Qrr Reverse Recovery Charge4 dI/dt=-100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. 4.Guaranteed by design. 5.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω , VGS=10V , IAS=6A 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. RDS(ON) Static Drain-Source On-Resistance2 USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =1 75o C 10V 7.0V 6.0V 5.0V V GS =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 3A T A = 25 o C 0.2 0.6 1.4 1.8 2.2 2.6 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =5A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =1 75o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1 mA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 10V QGS QGD QG Charge 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =30V 800 1600 2400 3200 0 2 04 06 08 0 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0 25 50 75 100 125 150 175 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 120 160 200 0 4 8 12 16 20 24 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS = 10V 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =1 75o CT j =25 o C V DS =10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 2 4 6 8 10 12 14 16 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V GS =-4.0V 02468 1 0 1 2 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =1 75o C -10V -7.0V -6.0V -5.0V V GS =-4.0V 105 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -3A T A =25 o C 0.2 0.6 1.4 1.8 2.2 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -4A V GS = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j = 175o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th) I D = - 1m A
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0 5 10 15 20 25 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 4 A V DS = -30V 400 800 1200 1600 0 2 04 06 08 0 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0 25 50 75 100 125 150 175 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 200 300 400 500 01 0 2 0 3 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A)T j =1 75o CT j =25 o C V DS = -10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA
Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence
Package Outline : SO-8 MIN NOM MAX 1.35 1.55 1.75 0.05 0.15 0.25 0.30 0.41 0.51 4.80 5.05 5.30 5.79 6.00 6.20 3.70 3.90 4.10 0.17 0.21 0.25 0.38 0.83 1.27 0° 4° 8° 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-M8-G-v03 B D E e SYMBOLS Millimeters A
1.27 TYP
F α G e B 5 6 7 8 D A E αG F
SO-8 FOOTPRINT： Draw No. M1-M8-G-v03