XP6B1K0EU6 YAGEO | Alldatasheet

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Technical content

DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive BVDSS -60V ▼ Small Package Outline RDS(ON) 1Ω ▼ Embedded Protection Diode ID -390mA ▼ RoHS Compliant & Halogen Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ mA ID@TA=70℃ mA IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 450 ℃/W -55 to 150 Pulsed Drain Current1 -1.6 Thermal Data -55 to 150 0.277 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range +20 -390 Halogen-Free Product Drain Current, VGS @ 10V3 -310 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 XP6B1K0EU6 Rating -60 202312011YAGEO XP6B1K0 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. SOT-363 package is ultra-small surface mount package and lead free RoHS compliant. SOT-363

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-300mA - - 1 Ω VGS=-4.5V, ID=-100mA - - 1.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-300mA - 0.8 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=-1A - 2.5 4 nC Qgs Gate-Source Charge V DS=-30V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 0.5 - nC td(on) Turn-on Delay Time V DS=-30V - 8 - ns tr Rise Time I D=-300mA - 4 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 9- ns tf Fall Time V GS=-10V - 8 - ns Ciss Input Capacitance V GS=0V - 85 136 pF Coss Output Capacitance V DS=-30V - 13 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-210mA, VGS=0V - - -1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 800℃/W when mounted on min. copper pad. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -300mA V GS = -10V 0.4 0.8 1.2 1.6 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V GS = -4.0V 0.2 0.4 0.6 0.8 1.2 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V GS = -4.0V T A = 150o C 0.2 0.4 0.6 0.8 1.2 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -250uA 0.5 0.7 0.9 1.1 1.3 1.5 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω) I D = -300mA T A =25 o C

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Gate Charge Waveform Temperature 01234 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1A V DS = -30V 0.001 0.01 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 800℃/W 120 160 200 1 1 12 13 14 15 16 17 1 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.02 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) Operation in this area limited by RDS(ON) Q VG -10V QGS QGD QG Charge

Part Number : 6U 6USS Date Code : SS SS

Package Outline : SOT-363 Millimeters SYMBOLS MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A2 0.70 0.85 1.00 b 0.15 0.25 0.35 C 0.05 0.15 0.25 D 1.80 2.00 2.20 E1 1.15 1.25 1.35 E 1.80 2.15 2.50 e L 0.26 0.36 0.46 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-U6-G-v00 0.65 (ref.) E1 E b A A2 A1 C L D e

(SOT-363) Draw No. M1-U6-G-v00 SC-70-6L(SOT-363) FOOTPRINT： 2.15mm 0.4mm 0.8mm 0.65mm 1.3mm Pin1