XP6932MT

XP6932MT YAGEO | Alldatasheet

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Technical content

ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement CH-1 BV DSS 30V ▼ Easy for DC/DC Buck RDS(ON) 5.5mΩ Converter Application CH-2 BV DSS 30V ▼ RoHS Compliant & Halogen-Free RDS(ON) 2.5mΩ

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Units CH-2 VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current (Package Limited) 40 A ID@TA=25℃ Drain Current , VGS @ 10V3 22.9 A ID@TA=70℃ Drain Current , VGS @ 10V3 18.4 A IDM Pulsed Drain Current1 160 A PD@TA=25℃ Total Power Dissipation3 2.08 W EAS Single Pulse Avalanche Energy6 32 mJ TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ CH-2 Rthj-c 3 ℃/W Rthj-t 9 ℃/W Rthj-a 60 ℃/W Rthj-a 120 ℃/W130 Thermal Data 202502032YAGEO Symbol CH-1 Rating UnitsParameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient4 Maximum Thermal Resistance, Junction-ambient3 -55 to 150 +20 1.78 Maximum Thermal Resistance, Junction-top XP6932MT 14.2 11.3 Halogen-Free Product Rating CH-1 112 -55 to 150 XP6932 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. D2/S1 G1 D1 D1 D1 G2 S2 S2 S2 S1/D2 D1 PMPAK® 5x6

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=14A - - 5.5 m Ω VGS=4.5V, ID=7A - - 8.8 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.3 - 2.2 V gfs Forward Transconductance VDS=5V, ID=14A - 52 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - + 0.1 uA Qg(10V) Total Gate Charge5 ID=16A - 19 30.4 nC Qg(4.5V) Total Gate Charge5 VDS=15V - 9 14.4 nC Qgs Gate-Source Charge5 -4- nC Qgd Gate-Drain ("Miller") Charge5 -3- nC td(on) Turn-on Delay Time5 VDS=15V - 8 - ns tr Rise Time5 ID=16A - 54 - ns td(off) Turn-off Delay Time5 RG=3Ω -1 8- ns tf Fall Time5 VGS=10V - 3 - ns Ciss Input Capacitance5 VGS=0V - 1070 1712 pF Coss Output Capacitance5 VDS=15V - 550 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 30 - pF Rg Gate Resistance f=1.0MHz - 2.2 4.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=16A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=16A, VGS=0V - 23 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 13 - nC -- VVDSt Drain-Source Breakdown Voltage7 (transient) VGS=0V, IAS=60A, ttransient < 50ns 36

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 2.5 m Ω VGS=4.5V, ID=12A - - 3.9 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.3 - 2.2 V gfs Forward Transconductance VDS=5V, ID=20A - 92 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - + 0.1 uA Qg(10V) Total Gate Charge5 ID=20A - 40 64 nC Qg(4.5V) Total Gate Charge5 VDS=15V - 19 30.4 nC Qgs Gate-Source Charge5 -9- nC Qgd Gate-Drain ("Miller") Charge5 -5- nC td(on) Turn-on Delay Time5 VDS=15V - 10 - ns tr Rise Time5 ID=20A - 47 - ns td(off) Turn-off Delay Time5 RG=3Ω -2 8- ns tf Fall Time5 VGS=10V - 6 - ns Ciss Input Capacitance5 VGS=0V - 2450 3920 pF Coss Output Capacitance5 VDS=15V - 1450 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=20A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 38 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, on steady-state 4.Surface mounted on Min. copper pad of FR4 board, on steady-state 5.Guaranteed by design. 6.Starting T j=25oC , VDD=30V , L=0.01mH , RG=25Ω , VGS=10V 7.Tj=25oC. Expected voltage stress during 100% EAS test. Production datalog is not available. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. VDSt Drain-Source Breakdown Voltage7 (transient) VGS=0V, IAS=80A, ttransient < 50ns 36 - - V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =14A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =7A T C =25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 0.1 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =16A V DS =15V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 93 33 7 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) Package Limited 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0 20 40 60 80 100 120 140 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V I D =1mA

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 150 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 120 160 200 240 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature (oC) Normalized RDS(ON) I D =20A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T C =25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 0.1 100 1000 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =15V 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 120 150 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 100 120 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A)Package Limited 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 0 20 40 60 80 100 120 140 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 6932 YWWSSS

A 0.90 1.00 1.10 b 0.33 0.42 0.51 A1 0.20 0.25 0.30 D 4.80 4.90 5.00 D2 3.61 3.79 3.96 E4 5.90 6.03 6.15 E 5.70 5.75 5.80 E2 2.02 2.22 2.42 E3 0.94 1.18 1.42 e 1.27BSC J 0.40 0.50 0.60 H 0.48 0.58 0.68 L 0.38 0.55 0.71 1.All dimension are in millimeters. 2.Dimension does not include burrs and mold flash/protrusions. 3.The outline schematic is not to scale and slightly different from the actual product appearance. Draw No. M2-MT(DUD)-8-EI-G-v02 Package Outline : PMPAK 5x6 (DUD) BACKSIDE VIEW A b E E4 e H J L D

(DUD) PMPAK 5x6 (DUD) FOOTPRINT： Draw No. M2-MT(DUD)-8-EI-G-v02