XP65SL145AFI

XP65SL145AFI YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.145Ω ▼ Simple Drive Requirement ID 3 21A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V3 A ID@TC=100℃ Drain Current, VGS @ 10V3 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy4 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.7 ℃/W Rthj-a 65 ℃/W 13.2 +20 Halogen-Free Product 202311301YAGEO 1.92 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient 300 Parameter 650 33.7 Rating Gate-Source Voltage, AC (f > 1Hz) + 30 G D S XP65SL145AF series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 650 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=9.6A - - 0.145 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=15V, ID=9.6A - 17 - S IDSS Drain-Source Leakage Current VDS=520V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge I D=9.6A - 88 140.8 nC Qgs Gate-Source Charge V DS=520V - 19 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 41 - nC td(on) Turn-on Delay Time V DD=325V - 24 - ns tr Rise Time I D=9.6A - 26 - ns td(off) Turn-off Delay Time R G=3.3Ω -8 5- ns tf Fall Time V GS=10V - 24 - ns Ciss Input Capacitance V GS=0V - 3200 5120 pF Coss Output Capacitance V DS=100V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 7 - pF Rg Gate Resistance f=1.0MHz - 4.2 8.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=9.6A, VGS=0V - 0.85 - V trr Reverse Recovery Time I S=14A, VGS=0V - 100 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 550 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Ensure that the junction temperature does not exceed T Jmax.. 4.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω 5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

0.37Ω ID 3,4 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.2 0.6 1.4 1.8 2.2 2.6 3.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =9.6A V G =10V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V 6.0V V G =5.0V V SD (V) IS (A) T j = 150 o CT j = 25 o C 0.5 1.5 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 100 110 120 130 140 150 56789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =9.6A T C =25 o C

0.37Ω ID 3,4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.1 100 1000 10000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9.6A V DS =520V 0.001 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) Q VG 10V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 200 400 600 800 1000 0 1 02 03 04 05 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 65SL145AF YWWSSS

Package Outline : TO-220CFM Millimeters MIN NOM MAX A 4.40 4.65 4.90 A1 2.50 2.68 2.86 b 0.70 0.84 0.98 b1 1.10 1.30 1.50 c 0.45 0.54 0.63 c2 2.34 2.54 2.74 E 10.00 10.20 10.40 L 12.78 13.22 13.65 L1 12.45 12.70 12.95 L2 15.10 15.80 16.50 L3 2.83 3.22 3.60 L4 15.67 16.04 16.40 L5 3.20 3.30 3.40 L6 6.50 6.73 6.95 φ 3.00 3.14 3.28 e 2.40 2.55 2.70 F 1.15 1.33 1.50 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-I3-FET-G-v10 SYMBOLS A c φ E φ b e L F

TO-220CFM FOOTPRINT： Draw No. M1-I3-FET-G-v10