XP65SL105AFS

XP65SL105AFS YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 105mΩ ▼ Simple Drive Requirement ID 3 30.8A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V3 A ID@TC=100℃ Drain Current, VGS @ 10V3 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation6 W EAS Single Pulse Avalanche Energy4 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.45 ℃/W Rthj-a 40 ℃/W +30 202311291YAGEO 3.12 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient (PCB mount)6 768 Rating 277.8 650 +20 30.8 19.5 Halogen-Free Product Parameter Gate-Source Voltage, AC (f > 1Hz) G D S XP65SL105AF series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-263(S)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 650 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12.8A - - 105 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=10V, ID=12.8A - 24 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge I D=12.8A - 111 177.6 nC Qgs Gate-Source Charge V DS=480V - 25 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 47 - nC td(on) Turn-on Delay Time V DD=300V - 26 - ns tr Rise Time I D=12.8A - 33 - ns td(off) Turn-off Delay Time R G=3.3Ω - 110 - ns tf Fall Time V GS=10V - 29 - ns Ciss Input Capacitance V GS=0V - 4300 6880 pF Coss Output Capacitance V DS=100V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 25 - pF Rg Gate Resistance f=1.0MHz - 4.3 8.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=12.8A, VGS=0V - 0.85 - V trr Reverse Recovery Time I S=19.2A, VGS=0V - 120 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 650 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 4.Starting T j=25oC , VDD=50V , L=150mH , RG=25Ω 5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Ensure that the junction temperature does not exceed TJmax.. 6.Surface mounted on 1 in2 copper pad of FR4 board

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =12.8A V G =10V 048 1 2 1 6 2 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V 0 4 8 1 21 62 02 42 8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V 6.0V V G =5.0V V SD (V) IS (A) T j = 150 o CT j = 25 o C 0.5 1.5 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =1mA 100 110 120 47 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =12.8A T C =25 o C

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 100 1000 10000 100000 0 100 200 300 400 500 600 700 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 30 60 90 120 150 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =12.8A V DS =480V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.001 0.01 0.1 100 1000 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =15V Q VG 10V QGS QGD QG Charge

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 120 180 240 300 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 100 200 300 400 500 0 2 04 06 08 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 65SL105AF YWWSSS

Package Outline : TO-263 Millimeters MIN NOM MAX A 4.00 4.75 5.20 A1 0.00 0.15 0.30 b 0.50 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.55 0.80 c1 1.10 1.40 1.70 D 8.30 9.05 9.80 E 9.50 10.10 10.70 e 2.04 2.54 3.04 L3 3.50 4.50 5.50 θ 0° ----- 8° H 13.07 15.27 16.57 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-S3-G-v05 1.5 (ref) SYMBOLS 5.10(ref) 1.27(ref) 7.00～9.00(ref) 2.54(ref) b e A θ c E D A θ L H

Draw No. M1-S3-G-v04 TO-263 FOOTPRINT： 2.54mm 10.5mm 10.5mm 1.2mm 2 mm 4mm 2.54mm Pin1