XP65SA420DH YAGEO | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V ▼ Low trr / Qrr RDS(ON) 0.42Ω ▼ Simple Drive Requirement ID 3 10A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V3 A ID@TC=100℃ Drain Current, VGS @ 10V3 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation6 W EAS Single Pulse Avalanche Energy4 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.6 ℃/W Rthj-a 62.5 ℃/W 78.1 650 +20 6.5 Halogen-Free Product +30 202311301YAGEO -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient (PCB mount)6 Parameter Rating Gate-Source Voltage, AC (f > 1Hz) G D S XP65SA420D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 650 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3.2A - - 0.42 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=15V, ID=5A - 5 - S IDSS Drain-Source Leakage Current VDS=520V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge I D=5A - 22 35.2 nC Qgs Gate-Source Charge V DS=520V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 10.5 - nC td(on) Turn-on Delay Time V DD=300V - 12 - ns tr Rise Time I D=5A - 13 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 5- ns tf Fall Time V GS=10V - 7 - ns Ciss Input Capacitance V GS=0V - 760 1216 pF Coss Output Capacitance V DS=100V - 34 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Rg Gate Resistance f=1.0MHz - 3.3 6.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=3.2A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=5A, VGS=0V - 115 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 635 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 5.I SD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Starting Tj=25oC , VDD=90V , L=100mH , RG=25Ω 6.Surface mounted on 1 in2 copper pad of FR4 board

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =3.2A V G =10V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V SD (V) IS (A) T j = 150 o CT j = 25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 360 380 400 420 440 460 56789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =3.2A T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 10000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 01 0 2 0 3 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =520V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.001 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90%

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 100 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 400 800 1200 1600 2000 02468 1 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 65SA420D YWWSSS

Package Outline : TO-252 Millimeters MIN NOM MAX A2 2.18 2.30 2.40 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 E3 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 －－ 1.25 L 0.90 1.34 1.78 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3EFIMT-G-v10 SYMBOLS ee D FB1 B C L

TO-252 FOOTPRINT： Draw No. M1-H3EFIMT-G-v10