XP65CM200EIT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.2Ω ▼ Simple Drive Requirement ID 3,4 21.5A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V3,4 A ID@TC=100℃ Drain Current, VGS @ 10V3,4 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy5 mJ dv/dt Peak Diode Recovery dv/dt 6 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W Rthj-a 65 ℃/W 650 Halogen-Free Product Parameter Rating 1.92 200 +20 Gate-Source Voltage, AC (f > 1Hz) + 30 21.5 13.6 34.7 202401192YAGEO -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient XP65CM200E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G DS TO-220CFM-T(IT) S G D

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 650 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 0.2 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=5A - 13 - S IDSS Drain-Source Leakage Current VDS=520V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge7 ID=5A - 33 52.8 nC Qgs Gate-Source Charge7 VDS=520V - 7 - nC Qgd Gate-Drain ("Miller") Charge7 VGS=10V - 12 - nC td(on) Turn-on Delay Time7 VDD=325V - 14 - ns tr Rise Time7 ID=5A - 13 - ns td(off) Turn-off Delay Time7 RG=3.3Ω -6 7- ns tf Fall Time7 VGS=10V - 17 - ns Ciss Input Capacitance7 VGS=0V - 1380 2208 pF Coss Output Capacitance7 VDS=100V - 35 - pF Crss Reverse Transfer Capacitance7 f=1.0MHz - 10 - pF Rg Gate Resistance f=1.0MHz - 9 18 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=5A, VGS=0V - - 1.5 V trr Reverse Recovery Time7 IS=5A, VGS=0V - 220 - ns Qrr Reverse Recovery Charge7 dI/dt=100A/µs - 2 - uC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.5 4.Ensure that the junction temperature does not exceed T Jmax.. 5.Starting Tj=25oC , VDD=90V , L=100mH , RG=25Ω , VGS=10V , IAS=2A 6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC 7.Guaranteed by design. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =5A V GS =10V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V GS =6.0V 01 0 2 0 3 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V V GS =6.0V V SD (V) IS (A) T j = 150 o C T j = 25 o C 0.5 1.5 2.5 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 155 175 195 215 235 255 468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Typ. Drain-Source on State Resistance 100 1000 10000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =520V 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 0 50 100 150 T C , Case Temperature ( o C ) PD , Power Dissipation (W) 200 400 600 800 1000 0 6 12 18 24 30 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Normalized BVDSS v.s. Junction Temperature 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

Package Outline : TO-220CFM-T Millimeters MIN NOM MAX A 4.30 4.50 4.70 b 0.54 0.69 0.84 b1 0.99 1.14 1.29 c 0.45 0.62 0.79 D 14.70 15.00 15.30 e E 9.70 10.00 10.30 F 2.50 2.70 2.90 G 6.30 6.70 7.10 L 12.50 13.00 13.50 L1 1.80 2.30 2.80 J 0.10 0.20 -- Q 2.50 2.60 2.90 Q1 2.90 3.10 3.30 φR 3.00 3.20 3.40 α 1.All dimension are in millimeters. 2.Dimension does not include burrs and mold flash/protrusions. 3.The outline schematic is not to scale and slightly different from the actual product appearance. Draw No. M1-IT-3-EF-G-V02 2.54 Ref. SYMBOLS 8.5 Ref. 3.5 Ref. 45˚ Ref. Q c φR e F AE b D L G Jα

Draw No. M1-IT-3-EF-G-V02 TO-220CFM-T FOOTPRINT： 1.8mm 2.54mm 2.54mm 1.15mm ....