XP65BM180IT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.18Ω ▼ Simple Drive Requirement ID 3,4 20A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V3,4 A ID@TC=100℃ Drain Current, VGS @ 10V3,4 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy5 mJ dv/dt Peak Diode Recovery dv/dt6 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W Rthj-a 65 ℃/W Halogen-Free Product +30 34.7 650 +20 202503182YAGEO 1.92 -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient Parameter Rating 200 Gate-Source Voltage, AC (f > 1Hz) G D S XP65BM180 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S TO-220CFM-T(IT)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6.2A - - 0.18 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=6.2A - 17 - S IDSS Drain-Source Leakage Current VDS=520V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge7 ID=6.2A - 45 72 nC Qgs Gate-Source Charge7 VDS=520V - 10 - nC Qgd Gate-Drain ("Miller") Charge7 VGS=10V - 17 - nC td(on) Turn-on Delay Time7 VDD=325V - 17 - ns tr Rise Time7 ID=6.2A - 15 - ns td(off) Turn-off Delay Time7 RG=3.3Ω -6 5- ns tf Fall Time7 VGS=10V - 24 - ns Ciss Input Capacitance7 VGS=0V - 1900 3040 pF Coss Output Capacitance7 VDS=100V - 75 - pF Crss Reverse Transfer Capacitance7 f=1.0MHz - 10 - pF Rg Gate Resistance f=1.0MHz - 6 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=6.2A, VGS=0V - - 1.5 V trr Reverse Recovery Time7 IS=6.2A, VGS=0V - 270 - ns Qrr Reverse Recovery Charge7 dI/dt=100A/µs - 3.1 - uC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 6.I SD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC 7.Guaranteed by design. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Ensure that the junction temperature does not exceed TJmax.. 5.Starting Tj=25oC , VDD=90V , L=100mH , RG=25Ω , VGS=10V , IAS=2A USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =6.2A V GS =10V 0 4 8 12 16 20 24 28 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V GS =6.0V 0 8 16 24 32 40 48 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V SD (V) IS (A) T j = 150 o C T j = 25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 125 135 145 155 165 175 456789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =6.2A T C =25 o C 10V 9.0V 8.0V 7.0V V GS =6.0V

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 10000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6.2A V DS = 520 V 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 1us 10us 100us 1ms 10ms DC Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90% 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Normalized BVDSS v.s. Junction Fig 16. Typical Coss Stored Energy Temperature Fig 17. Single Pulse Power Dissipation 1000 2000 3000 4000 5000 6000 t, Pulse Width(s) PD, Power Dissipation(W) Single Pulse T J(Max.) =150 o C T C =25 o C 0 100 200 300 400 500 600 V DS , Drain-to-Source Voltage (V) EOSS , Typical Coss Stored Energy (uJ) 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 400 800 1200 1600 2000 0 4 8 1 21 62 02 4 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

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Package Outline : TO-220CFM Millimeters MIN NOM MAX A 4.40 4.65 4.90 A1 2.50 2.68 2.86 b 0.70 0.84 0.98 b1 1.10 1.30 1.50 c 0.45 0.54 0.63 c2 2.34 2.54 2.74 E 10.00 10.20 10.40 L 12.78 13.22 13.65 L1 12.45 12.70 12.95 L2 15.10 15.80 16.50 L3 2.83 3.22 3.60 L4 15.67 16.04 16.40 L5 3.20 3.30 3.40 L6 6.50 6.73 6.95 φ 3.00 3.14 3.28 e 2.40 2.55 2.70 F 1.15 1.33 1.50 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-I3-FET-G-v10 SYMBOLS A c φ E φ b e L F

TO-220CFM FOOTPRINT： Draw No. M1-I3-FET-G-v10