XP60SC085DS

XP60SC085DS YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 600V ▼ Low trr / Qrr RDS(ON) 85mΩ ▼ Simple Drive Requirement ID 6 33A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V6 A ID@TC=100℃ Drain Current, VGS @ 10V6 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy3 mJ dv/dt Peak Diode Recovery dv/dt4 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.7 ℃/W Rthj-a 40 ℃/W 178.5 202503181YAGEO -55 to 150 -55 to 150 Maximum Thermal Resistance, Junction-ambient (PCB mount)5 3.12 200 +20 Gate-Source Voltage, AC (f > 1Hz) +30 600 Halogen-Free Product Parameter Rating G D S XP60SC085D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-263(S)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 85 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=10A - 20 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge7 ID=10A - 71 113.6 nC Qgs Gate-Source Charge7 VDS=480V - 20 - nC Qgd Gate-Drain ("Miller") Charge7 VGS=10V - 31 - nC td(on) Turn-on Delay Time7 VDD=300V - 38 - ns tr Rise Time7 ID=10A - 48 - ns td(off) Turn-off Delay Time7 RG=12Ω - 147 - ns tf Fall Time7 VGS=10V - 32 - ns Ciss Input Capacitance7 VGS=0V - 2850 4560 pF Coss Output Capacitance7 VDS=400V - 70 - pF Crss Reverse Transfer Capacitance7 f=1.0MHz - 10 - pF Rg Gate Resistance f=1.0MHz - 6 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.5 V trr Reverse Recovery Time7 IS=5A, VGS=0V - 146 - ns Qrr Reverse Recovery Charge7 dI/dt=100A/µs - 1 - uC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Starting T j=25oC , VDD=90V , L=100mH , RG=25Ω , VGS=10V , IAS=2A 4.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC 6.Limited by max. junction temperature. Maximum duty cycle D=0.75 7.Guaranteed by design. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. 5.Surface mounted on 1 in2 copper pad of FR4 board

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =10A V GS =10V 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V GS =6.0V 048 1 2 1 6 2 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V V GS =6.0V V SD (V) IS (A) T j = 150 o C T j = 25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 103 56789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =10A T C =25 o C

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 10000 100000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 03 0 6 0 9 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10A V DS =480V 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90% 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Normalized BVDSS v.s. Junction Fig 16. Typical Coss Stored Energy Temperature Fig 17. Single Pulse Power Dissipation 120 160 200 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 200 400 600 800 0 2 04 06 08 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =10mA 0 100 200 300 400 500 600 V DS , Drain-to-Source Voltage (V) EOSS , Typical Coss Stored Energy (uJ) 4000 8000 12000 16000 t, Pulse Width(s) PD, Power Dissipation(W) Single Pulse T J(Max.) =150 o C T C =25 o C

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 60SC085D YWWSSS

Package Outline : TO-263 Millimeters MIN NOM MAX A 4.00 4.75 5.20 A1 0.00 0.15 0.30 b 0.50 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.55 0.80 c1 1.10 1.40 1.70 D 8.30 9.05 9.80 E 9.50 10.10 10.70 e 2.04 2.54 3.04 L3 3.50 4.50 5.50 θ 0° ----- 8° H 13.07 15.27 16.57 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-S3-G-v05 1.5 (ref) SYMBOLS 5.10(ref) 1.27(ref) 7.00～9.00(ref) 2.54(ref) b e A θ c E D A θ L H

Draw No. M1-S3-G-v05 TO-263 FOOTPRINT： 2.54mm 10.5mm 10.5mm 1.2mm 2 mm 4mm 2.54mm Pin1