XP60CM190EDT8 YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 600V ▼ Fast Switching Characteristic RDS(ON) 0.19Ω ▼ Simple Drive Requirement ID 3,4 21.6A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V VGS V ID@TC=25℃ Drain Current, VGS @ 10V3,4 A ID@TC=100℃ Drain Current, VGS @ 10V3,4 A IDM Pulsed Drain Current1 A dv/dt MOSFET dv/dt Ruggedness (V DS = 0 …480V ) V/ns PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation7 W EAS Single Pulse Avalanche Energy5 mJ dv/dt Peak Diode Recovery dv/dt 6 V/ns TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a 50 ℃/WMaximum Thermal Resistance, Junction-ambient7 Halogen-Free Product 2.5 Parameter Rating 600 202403271YAGEO +20 21.6 13.6 Gate-Source Voltage, AC (f > 1Hz) + 30 104 200 -55 to 150 -55 to 150 XP60CM190E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PDFN 8X8_HV package is a very low profile for commercial- industrial surface mount application and suited for switching powe r converters. PDFN 8X8_HV 12 3 4 Top View Pin 1 Gate Pin 3,4 Power Source Pin 5 Drain Pin 2 Driver Source

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 0.19 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=6A - 13 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 1 uA Qg Total Gate Charge8 ID=6A - 33 53 nC Qgs Gate-Source Charge8 VDS=480V - 7 - nC Qgd Gate-Drain ("Miller") Charge8 VGS=10V - 12 - nC td(on) Turn-on Delay Time8 VDD=300V - 14 - ns tr Rise Time8 ID=6A - 17 - ns td(off) Turn-off Delay Time8 RG=3.3Ω -6 1- ns tf Fall Time8 VGS=10V - 19 - ns Ciss Input Capacitance8 VGS=0V - 1370 2192 pF Coss Output Capacitance8 VDS=100V - 40 - pF Crss Reverse Transfer Capacitance8 f=1.0MHz - 10 - pF Rg Gate Resistance f=1.0MHz - 9.5 19 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=6A, VGS=0V - - 1.5 V trr Reverse Recovery Time8 IS=6A, VGS=0V - 215 - ns Qrr Reverse Recovery Charge8 dI/dt=100A/µs - 2 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.5 4.Ensure that the junction temperature does not exceed T Jmax.. 5.Starting Tj=25oC , VDD=90V , L=100mH , RG=25Ω , VGS=10V , IAS=2A 6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC 7.Surface mounted on 1 in2 copper pad of FR4 board 8.Guaranteed by design. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

0.37Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =6A V GS =10V 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V GS =6.0V 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V V GS =6.0V V SD (V) IS (A) T j = 150 o C T j = 25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA 150 170 190 210 230 456789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T C =25 o C

0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 10000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 6A V DS = 480V 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 1us 10us 100us 1ms 10ms DC Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90% 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Normalized BVDSS v.s. Junction Temperature 120 160 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 200 400 600 800 0 6 12 18 24 30 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 60CM190E YWWSSS

Package Outline : PDFN 8x8_HV MIN NOM MAX A 0.75 0.93 1.10 A1 0.00 -- 0.05 b 0.90 1.00 1.10 c 0.10 0.20 0.30 D 7.90 8.00 8.10 D1 7.10 7.20 7.30 E 7.90 8.00 8.10 E1 4.25 4.55 4.85 E2 2.65 2.75 2.85 E3 0.30 0.40 0.50 e L 0.40 0.50 0.60 SYMBOLS Millim eters 2.00BSC BOTTOM VIEW D E b e 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Burrs And Mold Flash. Draw No. M1-DT8EF-G-v03 A c

PDFN 8x8 HV FOOTPRINT： Draw No. M1-DT8EF-G-v03