XP4438GYT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Small Size & Lower Profile RDS(ON) 12mΩ ▼ RoHS Compliant & Halogen-Free ID 13.7A

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 35 ℃/W 202311153YAGEO XP4438GYT Rating Halogen-Free Product +20 13.7 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 -55 to 150 Drain Current, VGS @ 10V3 Pulsed Drain Current1 50 Storage Temperature Range 3.57 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range G D S D D D D S S S G PMPAK® 3 x 3 XP4438 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. XP4438GYT 1

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=11A - 9 12 m Ω VGS=4.5V, ID=5A - 15 18 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 1.5 3 V gfs Forward Transconductance V DS=10V, ID=11A - 20 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=11A - 10 16 nC Qgs Gate-Source Charge V DS=15V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.5 - nC td(on) Turn-on Delay Time V DS=15V - 9 - ns tr Rise Time I D=1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 1- ns tf Fall Time V GS=10V - 4.5 - ns Ciss Input Capacitance V GS=0V - 1100 1760 pF Coss Output Capacitance V DS=15V - 125 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=11A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC/W at steady state. XP4438GYT 2

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T A =25 o C 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 ℃ 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =11A V G =10V 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA XP4438GYT 3

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =15V 400 800 1200 1600 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthia=85 ℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) XP4438GYT 4

Package Code : YT Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 4438GYT YWWSSS meet Rohs requirement for low voltage MOSFET only XP4438GYT 5

A 2.90 3.10 3.40 B 2.20 2.45 2.80 e 0.60 0.65 0.70 b2 0.20 0.30 0.40 C 2.90 3.10 3.40 c1 0.10 0.30 0.50 c2 1.20 1.70 2.20 c3 0.10 0.38 0.65 D 0.65 0.80 1.05 d1 0.00 0.10 0.20 E 0.10 0.18 0.25 A1 2.900 3.30 3.600 c4 2.900 3.30 3.600 g 0.20 (ref) Package Outline : PMPAK 3x3 b2e d1D 1c 1 c 2 c 3 B A g c 4C BOTTOM VIEW 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD and Pin contour is for reference, it may has little difference by option. Draw No. M1-YT8-G-v06 E d1D PMPAK-3x3(YT) 6

Draw No. M1-YT8-G-v06 PMPAK3X3 FOOTPRINT： PMPAK-3x3(YT) 7