XP4242AM YAGEO | Alldatasheet
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Technical content
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low Gate Charge RDS(ON) 18mΩ ▼ Fast Switching Performance ID 3 8.1A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W 8.1 202401221YAGEO Drain-Source Voltage 30 6.5 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Rating XP4242AM Drain Current, VGS @ 10V3 Halogen-Free Product -55 to 150 Gate-Source Voltage + 20 Drain Current, VGS @ 10V3 Pulsed Drain Current1 30 Total Power Dissipation 2 Storage Temperature Range 7.2 Parameter SO-8 XP4242A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V VGS=10V, ID=8A - - 18 m Ω VGS=4.5V, ID=5A - - 24 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.3 - 2.3 V gfs Forward Transconductance V DS=5V, ID=8A - 28 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge5 ID=8A - 18 28.8 nC Qgs Gate-Source Charge5 VDS=15V - 3 - nC Qgd Gate-Drain ("Miller") Charge5 VGS=10V - 4.5 - nC td(on) Turn-on Delay Time5 VDS=15V - 8 - ns tr Rise Time5 ID=1A - 9 - ns td(off) Turn-off Delay Time5 RG=3.3Ω -2 2- ns tf Fall Time5 VGS=10V - 6 - ns Ciss Input Capacitance5 VGS=0V - 800 1280 pF Coss Output Capacitance5 VDS=15V - 150 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=8A, VGS=0V - 10 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V 5.Guaranteed by design. 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. RDS(ON) Static Drain-Source On-Resistance2 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V GS = 4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V GS =4.0V T A =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Drain Current v.s. Ambient Temperature 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =8A V DS =15V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 93 33 7 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0.5 1.5 2.5 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135℃/W
Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence
Package Outline : SO-8 MIN NOM MAX 1.35 1.55 1.75 0.05 0.15 0.25 0.30 0.41 0.51 4.80 5.05 5.30 5.79 6.00 6.20 3.70 3.90 4.10 0.17 0.21 0.25 0.38 0.83 1.27 0° 4° 8° 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-M8-G-v03 B D E e SYMBOLS Millimeters A
1.27 TYP
F α G e B 5 6 7 8 D A E αG F
SO-8 FOOTPRINT： Draw No. M1-M8-G-v03