XP4024EH YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 6mΩ ▼ Fast Switching Characteristic ID 60A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a 62.5 ℃/W Total Power Dissipation3 2 202311152YAGEO Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Total Power Dissipation Gate-Source Voltage + 20 Drain Current, VGS @ 10V, (Chip) 60 Drain Current, VGS @ 10V, (Chip) 38 Pulsed Drain Current1 160 Parameter Rating Drain-Source Voltage 30 XP4024EH 36.7 Halogen-Free Product G D S TO-252(H) XP4024 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device fo r use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited fo r high current application due to the low connection resistance. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - 4 6 m Ω VGS=4.5V, ID=20A - 5.5 9 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 120 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=20A - 17 27 nC Qgs Gate-Source Charge V DS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 11 - nC td(on) Turn-on Delay Time V DS=15V - 8 - ns tr Rise Time I D=30A - 65 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 2- ns tf Fall Time V GS=10V - 7 - ns Ciss Input Capacitance V GS=0V - 1500 2400 pF Coss Output Capacitance V DS=25V - 260 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Source Current ( Body Diode ) - - 60 A VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=30A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V GS = 4.0 V 120 160 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V GS = 4.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =24V 500 1000 1500 2000 1 7 13 19 25 31 37 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 100 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =5V T j = -40 o C Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 2 04 06 08 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =3.0 4.0V 4.5V 5.0V V GS =10 V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA V GS =3.5V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 4024EH YWWSSS

Package Outline : TO-252 Millimeters MIN NOM MAX A2 2.18 2.30 2.40 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 E3 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 －－ 1.25 L 0.90 1.34 1.78 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3EFIMT-G-v10 SYMBOLS ee D FB1 B C L

TO-252 FOOTPRINT： Draw No. M1-H3EFIMT-G-v10