XP3N9R5AM YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 9.5mΩ ▼ Fast Switching Characteristic ID 3 12.5A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃/W 202401231YAGEO XP3N9R5AM Halogen-Free Product Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage + Drain Current, VGS @ 10V3 12.5 Drain Current, VGS @ 10V3 Pulsed Drain Current1 50 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Storage Temperature Range XP3N9R5A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G D S S S S G D D D D SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 9.5 m Ω VGS=4.5V, ID=6A - - 17 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.3 - 3 V gfs Forward Transconductance V DS=5V, ID=12A - 33 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge4 ID=12A - 18 28.8 nC Qgs Gate-Source Charge4 VDS=15V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge4 VGS=10V - 4 - nC td(on) Turn-on Delay Time4 VDS=15V - 8 - ns tr Rise Time4 ID=1A - 8 - ns td(off) Turn-off Delay Time4 RG=3.3Ω -2 2- ns tf Fall Time4 VGS=10V - 5.5 - ns Ciss Input Capacitance4 VGS=0V - 800 1280 pF Coss Output Capacitance4 VDS=15V - 150 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.1A, VGS=0V - - 1.2 V trr Reverse Recovery Time4 IS=12A, VGS=0V, - 9.5 - ns Qrr Reverse Recovery Charge4 dI/dt=100A/µs - 3 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Guaranteed by design. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on min. copper pad. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V GS = 4.0V 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V GS = 4.0V T A = 150o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T A =25 o C 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 2A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =125℃/W 0.001 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 3 6 9 12 15 18 21 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 2A V DS =15V 300 600 900 1200 1500 1 5 9 13 17 21 25 29 33 37 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C Operation in this area limited by RDS(ON) Q VG 10V QGS QGD QG Charge

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 100 0 8 16 24 32 40 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

Package Outline : SO-8 MIN NOM MAX 1.35 1.55 1.75 0.05 0.15 0.25 0.30 0.41 0.51 4.80 5.05 5.30 5.79 6.00 6.20 3.70 3.90 4.10 0.17 0.21 0.25 0.38 0.83 1.27 0° 4° 8° 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-M8-G-v03 B D E e SYMBOLS Millimeters A

1.27 TYP

F α G e B 5 6 7 8 D A E αG F

SO-8 FOOTPRINT： Draw No. M1-M8-G-v03