XP3N3R0CMT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 3mΩ ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient3 25 ℃/W +20 Rating Halogen-Free Product -55 to 150 Drain Current, VGS @ 10V3 202503122YAGEO Parameter Total Power Dissipation3 Operating Junction Temperature Range Thermal Data 200 Storage Temperature Range 31.2Total Power Dissipation Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 Drain Current , VGS @ 10V Drain Current , VGS @ 10V -55 to 150 Pulsed Drain Current1 XP3N3R0C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK® 5x6 D D D D G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=19A - 2.6 3 m Ω VGS=4.5V, ID=12A - 3.8 4.8 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.3 1.7 2.5 V gfs Forward Transconductance VDS=5V, ID=19A - 88 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(10V) Total Gate Charge 5 ID=19A - 49 78.4 nC Qg(4.5V) Total Gate Charge 5 VDS=15V - 24 38.4 nC Qgs Gate-Source Charge5 -9- nC Qgd Gate-Drain ("Miller") Charge5 -1 0- nC td(on) Turn-on Delay Time5 VDS=15V - 11 - ns tr Rise Time5 ID=19A - 56 - ns td(off) Turn-off Delay Time5 RG=6Ω -4 8- ns tf Fall Time5 VGS=10V - 76 - ns Ciss Input Capacitance5 VGS=0V - 2450 3920 pF Coss Output Capacitance5 VDS=25V - 290 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 185 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=19A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=19A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V , IAS=30A 5.Guaranteed by design. 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 240 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V GS = 4.0V T C =25 o C 100 120 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 6.0V 5.0V V GS = 4.0V 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1 2A T C =25 o C 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =19A V GS =10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 9A V DS =15V 500 1000 1500 2000 2500 3000 3500 4000 1 7 13 19 25 31 37 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms DC 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 100 120 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 0 20 40 60 80 100 120 140 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3N3R0C YWWSSS

A 0.90 1.10 1.30 b 0.33 0.41 0.51 C 0.254(Ref.) D1 4.80 4.90 5.10 D2 3.61 4.00 4.40 E 5.80 6.03 6.25 E1 (Ref.) 5.60 5.75 5.90 E2 (Ref.) 3.30 3.55 3.80 e H 0.35 － 0.90 L 0.35 0.55 0.75 L1 0.06 0.13 0.20 0° － 12° 1.All dimension are in millimeters. 2.Dimension does not include burrs and mold flash/protrusions. 3.The outline schematic is not to scale and slightly different from the actual product appearance. Draw No. M1-MT-8-EIFMRL-G-v08 Package Outline : PMPAK 5x6

1.27 BSC

α(Ref.) BACKSIDE VIEW b α(Reference) E1 E L1e H K L C A

(E-TYPE) PMPAK 5X6(E-TYPE) FOOTPRINT： Draw No. M1-MT-8-EIFMRL-G-v08