XP3N2R7M YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 2.7mΩ ▼ Fast Switching Characteristic ID 3 24A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃/W Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Drain Current, VGS @ 10V3 2.5 -55 to 150Storage Temperature Range Total Power Dissipation Pulsed Drain Current1 100 Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage + 20 Drain Current, VGS @ 10V3 202501091YAGEO XP3N2R7M Halogen-Free Product XP3N2R7 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G D S S S S G D D D D SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 2.7 m Ω VGS=4.5V, ID=12A - - 4.2 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=20A - 100 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=10V) Total Gate Charge 5 ID=20A - 71 114 nC Qg(VGS=4.5V) Total Gate Charge 5 VDS=15V - 37 60 nC Qgs Gate-Source Charge5 -1 0- nC Qgd Gate-Drain ("Miller") Charge5 -1 9- nC td(on) Turn-on Delay Time5 VDS=15V - 13 - ns tr Rise Time5 ID=1A - 14 - ns td(off) Turn-off Delay Time5 RG=3.3Ω -5 2- ns tf Fall Time5 VGS=10V - 30 - ns Ciss Input Capacitance5 VGS=0V - 2900 4640 pF Coss Output Capacitance5 VDS=15V - 520 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 400 - pF Rg Gate Resistance f=1.0MHz - 0.8 1.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.1A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=20A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on min. copper pad. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V , IAS=40A 5.Guaranteed by design. 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T A =25 o C 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA 100 120 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V GS =4.0V T A =25 o C 100 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V GS =4.0V T A =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0.01 0.1 100 1000 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 2 04 06 08 0 1 0 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =15V 1000 2000 3000 4000 5000 6000 0 4 8 12 16 20 24 28 32 36 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 120 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 0 20 40 60 80 100 120 140 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V

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