XP3N018YT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Small Size & Low RDS(ON) RDS(ON) 18mΩ ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 40 ℃/W Storage Temperature Range Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Drain Current, VGS @ 10V3 Pulsed Drain Current1 80 +20 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V 23 XP3N018YT Rating Halogen-Free Product Total Power Dissipation 15.6 202503121YAGEO 3.12 -55 to 150 7.2 -55 to 150 G D S D D D D S S S G PMPAK® 3 x 3 XP3N018 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 18 m Ω VGS=4.5V, ID=5A - - 32 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=10A - 27 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=10V) Total Gate Charge 5 ID=10A - 12 20 nC Qg(VGS=4.5V) Total Gate Charge 5 VDS=15V 6 10 nC Qgs Gate-Source Charge5 - 2.5 - nC Qgd Gate-Drain ("Miller") Charge5 - 3.5 - nC td(on) Turn-on Delay Time5 VDS=15V - 7 - ns tr Rise Time5 ID=10A - 41 - ns td(off) Turn-off Delay Time5 RG=3.3Ω -1 6- ns tf Fall Time5 VGS=10V - 4 - ns Ciss Input Capacitance5 VGS=0V - 500 800 pF Coss Output Capacitance5 VDS=15V - 95 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 2.2 4.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.6A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=10A, VGS=0V - 8 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 2 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V , IAS=12A 5.Guaranteed by design. 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V GS =4.0V T C =25 o C 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T C =25 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =10A V GS =10V 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 02468 1 0 1 2 1 4 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10 A V DS =15V 200 400 600 800 1000 0 4 8 12 16 20 24 28 32 36 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j = 150o C T j =25 o C V DS =5V 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) T j = -55 o C 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 120 160 200 0 1 02 03 04 05 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V 0 25 50 75 100 125 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 3N018 YWWSSS

A 2.90 3.10 3.40 B 2.20 2.45 2.80 e 0.60 0.65 0.70 b2 0.20 0.30 0.40 C 2.90 3.10 3.40 c1 0.10 0.30 0.50 c2 1.20 1.70 2.20 c3 0.10 0.38 0.65 D 0.65 0.80 1.05 d1 0.00 0.10 0.20 E 0.10 0.18 0.25 A1 2.900 3.30 3.600 c4 2.900 3.30 3.600 g 0.20 (ref) Package Outline : PMPAK 3x3 b2e d1D 1c 1 c 2 c 3 B A g c 4C BOTTOM VIEW 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD and Pin contour is for reference, it may has little difference by option. Draw No. M1-YT8-G-v06 E d1D

Draw No. M1-YT8-G-v06 PMPAK3X3 FOOTPRINT：