XP3C020AYT

XP3C020AYT YAGEO | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 12

Technical content

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 30V ▼ Good Thermal Performance RDS(ON) 20mΩ ▼ Fast Switching Performance ID 3 8.9A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -30V RDS(ON) 45mΩ Description ID 3 -6.1A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage +20 + 20 V ID@TA=25℃ Drain Current3, VGS @ 10V 8.9 -6.1 A ID@TA=70℃ Drain Current3, VGS @ 10V 7.1 -4.9 A IDM Pulsed Drain Current1 20 -20 A PD@TA=25℃ Total Power Dissipation 2.5 W IAS Avalanche Current4 12 -12 A EAS Single Pulse Avalanche Energy4 7.2 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient3 50 ℃/W Parameter 202503111YAGEO XP3C020AYT Halogen-Free Product XP3C020A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. G1S2 PMPAK® 3x3

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 20 m Ω VGS=4.5V, ID=4A - - 35 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 1.4 - 2.5 V gfs Forward Transconductance VDS=5V, ID=8A - 23 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=10V) Total Gate Charge 5 ID=8A - 12 20 nC Qg(VGS=4.5V) Total Gate Charge 5 VDS=15V - 6 10 nC Qgs Gate-Source Charge5 -2- nC Qgd Gate-Drain ("Miller") Charge5 -3- nC td(on) Turn-on Delay Time5 VDS=15V - 7 - ns tr Rise Time5 ID=1A - 9 - ns td(off) Turn-off Delay Time5 RG=3.3Ω -1 8- ns tf Fall Time5 VGS=10V - 4 - ns Ciss Input Capacitance5 VGS=0V - 500 800 pF Coss Output Capacitance5 VDS=15V - 90 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=8A, VGS=0V - 8 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2 - nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - - 45 m Ω VGS=-4.5V, ID=-3A - - 85 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -2.5 V gfs Forward Transconductance VDS=-5V, ID=-6A - 11 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=-10V) Total Gate Charge 5 ID=-6A - 15 24 nC Qg(VGS=-4.5V) Total Gate Charge 5 VDS=-15V - 7 12 nC Qgs Gate-Source Charge5 - 2.5 - nC Qgd Gate-Drain ("Miller") Charge5 -3- nC td(on) Turn-on Delay Time5 VDS=-15V - 9 - ns tr Rise Time5 ID=-1A - 8 - ns td(off) Turn-off Delay Time5 RG=3.3Ω -4 0- ns tf Fall Time5 VGS=-10V - 22 - ns Ciss Input Capacitance5 VGS=0V - 710 1136 pF Coss Output Capacitance5 VDS=-15V - 95 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 11 22 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage2 IS=-2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-6A, VGS=0V - 9.5 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V 5.Guaranteed by design. 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 90oC/W at steady state. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 4 A T A = 25 o C 0.2 0.6 1.4 1.8 2.2 2.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1 mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 10V QGS QGD QG Charge 0369 1 2 1 5 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =8A V DS =15V 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 33 37 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 90℃/W t T 0.01

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance Fig 17. Normalized BVDSS v.s. Junction Temperature 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 120 0 1 02 03 04 05 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS = 10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =5V T j = -55 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V GS =-4.0V 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -7.0V -6.0V -5.0V V GS =-4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = - 3 A T A =25 o C 0.2 0.6 1.4 1.8 2.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = - 6 A V GS = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0369 1 2 1 5 1 8 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 6 A V DS = -15V 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 90℃/W t T 0.01

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance Fig 17. Normalized BVDSS v.s. Junction Temperature 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 200 400 600 0 1 02 03 04 05 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V T j = -55 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = - 1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 3C020A YWWSSS

A 2.90 3.10 3.40 B 2.20 2.45 2.80 e 0.60 0.65 0.70 b2 0.20 0.30 0.40 C 2.90 3.10 3.40 c1 0.10 0.30 0.50 c2 1.20 1.70 2.20 c3 0.10 0.38 0.65 D 0.65 0.80 1.05 d1 0.00 0.10 0.20 E 0.10 0.18 0.25 A1 2.900 3.30 3.600 c4 2.900 3.30 3.600 g 0.20 (ref) Package Outline : PMPAK 3x3 b2e d1D 1c 1 c 2 c 3 B A g c 4C BOTTOM VIEW 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD and Pin contour is for reference, it may has little difference by option. Draw No. M1-YT8-G-v06 E d1D

Draw No. M1-YT8-G-v06 PMPAK3X3 FOOTPRINT：