XP3C010BM

XP3C010BM YAGEO | Alldatasheet

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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 30V ▼ Low Gate Charge RDS(ON) 10.8mΩ ▼ Fast Switching Performance ID 3 11A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -30V RDS(ON) 24mΩ Description ID 3 -7.5A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage +20 + 20 V ID@TA=25℃ 11 -7.5 A ID@TA=70℃ 8.8 -6 A IDM Pulsed Drain Current1 40 -30 A PD@TA=25℃ Total Power Dissipation W IAS Avalanche Current4 20 -20 A EAS Single Pulse Avalanche Energy4 20 20 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Drain Current, VGS @ 10V3 202601091YAGEO Parameter Thermal Data Halogen-Free Product Drain Current, VGS @ 10V3 S1G1 SO-8 XP3C010B series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V VGS=10V, ID=9A - - 10.8 m Ω VGS=4.5V, ID=5A - - 16 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.45 - 3 V gfs Forward Transconductance VDS=5V, ID=9A - 45 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=10V) Total Gate Charge 5 ID=9A - 29 47 nC Qg(VGS=4.5V) Total Gate Charge 5 VDS=15V - 15 24 nC Qgs Gate-Source Charge5 -5- nC Qgd Gate-Drain ("Miller") Charge5 -8- nC td(on) Turn-on Delay Time5 VDS=15V - 9 - ns tr Rise Time5 ID=1A - 10 - ns td(off) Turn-off Delay Time5 RG=3.3Ω -3 3- ns tf Fall Time5 VGS=10V - 14 - ns Ciss Input Capacitance5 VGS=0V - 1260 2016 pF Coss Output Capacitance5 VDS=15V - 230 - pF Crss Reverse Transfer Capacitance5 f=1.0MHz - 190 - pF Rg Gate Resistance f=1.0MHz - 2.8 5.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.5A, VGS=0V - - 1.2 V trr Reverse Recovery Time5 IS=9A, VGS=0V - 14 - ns Qrr Reverse Recovery Charge5 dI/dt=100A/µs - 5 - nC RDS(ON) Static Drain-Source On-Resistance2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-7A - - 24 m Ω VGS=-4.5V, ID=-5A - - 32 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -2.5 V gfs Forward Transconductance VDS=-5V, ID=-7A - 24 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg(VGS=-10V) Total Gate Charge 4 ID=-7A - 37 60 nC Qg(VGS=-4.5V) Total Gate Charge 4 VDS=-15V - 18 29 nC Qgs Gate-Source Charge4 -6- nC Qgd Gate-Drain ("Miller") Charge4 -7- nC td(on) Turn-on Delay Time4 VDS=-15V - 10 - ns tr Rise Time4 ID=-1A - 10 - ns td(off) Turn-off Delay Time4 RG=3.3Ω - 130 - ns tf Fall Time4 VGS=-10V - 63 - ns Ciss Input Capacitance4 VGS=0V - 1800 2880 pF Coss Output Capacitance4 VDS=-15V - 230 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 200 - pF Rg Gate Resistance f=1.0MHz - 13.5 27 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.5A, VGS=0V - - -1.2 V trr Reverse Recovery Time5 IS=-7A, VGS=0V - 14 - ns Qrr Reverse Recovery Charge5 dI/dt=-100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V 5.Guaranteed by design. 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. RDS(ON) Static Drain-Source On-Resistance2 USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 5 A T A = 25 o C 0.2 0.6 1.4 1.8 2.2 2.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =9A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1 mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 10V QGS QGD QG Charge 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9A V DS =15V 600 1200 1800 2400 3000 1 5 9 13 17 21 25 29 33 37 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance Fig 17. Normalized BVDSS v.s. Junction Temperature 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 0 6 12 18 24 30 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS = 10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j =-55 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V GS = -4.0V 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -7.0V -6.0V -5.0V V GS = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = - 5 A T A =25 o C 0.2 0.6 1.4 1.8 2.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -7A V GS = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -7A V DS = -15V 800 1600 2400 3200 4000 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance Fig 17. Normalized BVDSS v.s. Junction Temperature 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 120 160 200 01 0 2 0 3 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 012345 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V T j =-55 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = - 1mA

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