XP3B020M YAGEO | Alldatasheet

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Technical content

DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Fast Switching Characteristic RDS(ON) 20mΩ ▼ Simple Drive Requirement ID 3 -8.3A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Pulsed Drain Current1 -30 202312041YAGEO Total Power Dissipation3 Operating Junction Temperature Range Storage Temperature Range Parameter XP3B020M Rating Halogen-Free Product Parameter Drain-Source Voltage Gate-Source Voltage Drain Current 3, VGS @ 10V -30 +20 -8.3 Thermal Data -55 to 150 -55 to 150 Drain Current3, VGS @ 10V -6.6 16.2 XP3B020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-8A - - 20 m Ω VGS=-4.5V, ID=-4A - - 36 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-8A - 16 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-5A - 12 19.2 nC Qgs Gate-Source Charge V DS=-15V - 4.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time V DS=-15V - 11 - ns tr Rise Time I D=-1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 3- ns tf Fall Time V GS=-10V - 20 - ns Ciss Input Capacitance V GS=0V - 1300 2080 pF Coss Output Capacitance V DS=-15V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-8A, VGS=0V, - 12 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 5 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 135 ℃/W when mounted on Min. copper pad. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+09 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 048 1 2 1 6 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = -4.0V T A =25 o C 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 4A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -8A V G = -10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o C T j =150 o C I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2.01E+09 Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0 4 8 12 16 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 5A V DS = -15V 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V T j = -55 o C

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 120 160 200 0 1 02 03 04 05 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

Package Outline : SO-8 MIN NOM MAX 1.35 1.55 1.75 0.05 0.15 0.25 0.30 0.41 0.51 4.80 5.05 5.30 5.79 6.00 6.20 3.70 3.90 4.10 0.17 0.21 0.25 0.38 0.83 1.27 0° 4° 8° 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-M8-G-v03 B D E e SYMBOLS Millimeters A

1.27 TYP

F α G e B 5 6 7 8 D A E αG F

SO-8 FOOTPRINT： Draw No. M1-M8-G-v03