XP3A010AMT YAGEO | Alldatasheet

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Technical content

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 10.4mΩ ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V4 A ID@TA=25℃ Drain Current3, VGS @ 10V A ID@TA=70℃ Drain Current3, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Rating Units Rthj-c 6 ℃/W Rthj-a 35 ℃/W -55 to 150 +20 Thermal Data 202502032YAGEO Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Halogen-Free Product -55 to 150 XP3A010AMT Rating 11.5 3.57 XP3A010A series are innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. G2 PMPAK® 5x6 S1 G1 S2 G2 D1 D1 D2 D2

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 10.4 m Ω VGS=4.5V, ID=7A - - 15.3 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 1.45 - 3 V gfs Forward Transconductance VDS=5V, ID=10A - 40 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge ID=7A - 14 22.4 nC Qgs Gate-Source Charge VDS=15V - 4.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.3 - nC td(on) Turn-on Delay Time VDS=15V - 9 - ns tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω -2 9- ns tf Fall Time VGS=10V - 9 - ns Ciss Input Capacitance VGS=0V - 1530 2448 pF Coss Output Capacitance VDS=15V - 225 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=12A, VGS=0V, - 11 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 85 ℃/W on steady state. 4.Package limitation current is 12A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =12A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =7A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=85oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =15V 1000 2000 3000 1 5 9 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Charge Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o CV DS =5V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3A010A YWWSSS

A 0.80 1.00 1.20 b 0.34 0.42 0.50 C 0.54 0.76 0.97 D 4.80 4.95 5.10 D1 4.11 4.21 4.31 E 5.90 6.05 6.20 E1 5.60 5.75 5.90 e L 0.05 0.15 0.25 0.60 (ref.) 0 60 (ref ) Package Outline : PMPAK 5x6 (Dual Pad) 1.60 (ref.) 1.27 (ref.) BACKSIDE VIEW e b H L E1 E I H I D2 4.80 5.15 5.50 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M2-1MT8-G-v02 0.60 (ref.) 3.60 (ref.) 0.15 (ref.) AC D ...

(Dual Pad, 左右) PMPAK5X6(Dual Pad,左右) FOOTPRINT： Draw No. M2-1MT8-G-v02