XP2N1K2EN1 YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.2V Low Gate Drive BVDSS 20V ▼ Lower Gate Charge RDS(ON) 1.2Ω ▼ Fast Switching Performance ID 200mA ▼ RoHS Compliant & Halogen-Free HBM ESD 2KV

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ mA IDM mA IS@TA=25℃ mA ISM mA PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 833 ℃/W Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Pulsed Drain Current1 400 Total Power Dissipation 0.15 Source Current (Body Diode) 125 Pulsed Source Current1(Body Diode) 800 Thermal Data Parameter 202310113YAGEO Drain Current3, VGS @ 2.5V 200 Parameter Rating Drain-Source Voltage 20 XP2N1K2EN1 Halogen-Free Product Gate-Source Voltage + 8 XP2N1K2E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application. 1 : Gate 2 : Drain 3 : Source SOT-723(N1) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=2.5V, ID=200mA - - 1.2 Ω VGS=1.8V, ID=200mA - - 1.4 Ω VGS=1.5V, ID=40mA - - 2.4 Ω VGS=1.2V, ID=20mA - - 4.8 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=1mA 0.3 - 1 V gfs Forward Transconductance V DS=10V, ID=200mA - 1.8 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=200mA - 0.7 - nC Qgs Gate-Source Charge V DS=10V - 0.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=2.5V - 0.2 - nC td(on) Turn-on Delay Time V DS=10V - 2 - ns tr Rise Time I D=150mA - 10 - ns td(off) Turn-off Delay Time R G=10Ω -3 0- ns tf Fall Time V GS=5V - 16 - ns Ciss Input Capacitance V GS=0V - 44 - pF Coss Output Capacitance V DS=10V - 14 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.13A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on min. copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 5. Forward Characteristic of Fig 6. Transfer Characteristics Reverse Diode 200 400 600 800 1000 012345 V GS , Gate-to-Source Voltage (V) RDSON (m T A =25 o C I D =20mA I D =200mA 0.01 0.1 V SD , Source-to-Drain Voltage (V) IS(A) T j =125 o C T j =75 o C T j =25 o C T j =-25 o C 100 200 300 400 500 0 0.4 0.8 1.2 1.6 V GS , Gate-to-Source Voltage (V) ID , Drain Current (mA) V DS =1 0V T j =125 o C T j =25 o C T j = -25 o C 0.1 0.2 0.3 0.4 0.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 4.5V 4.0V 2.5V 1.8V 1.5V 1.3V V G =1.2V 0.04 0.08 0.12 0.16 0.2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 125o C 4.0V 2.5V 1.8V 1.5V V G =1.2V 200 400 600 800 1000 1200 0 0.08 0.16 0.24 0.32 I D , Drain Current (A) RDS(ON) (m T j =25 o C 1.2V 1.5V 1.8V 2.5V V GS =4.0V

Fig 7. Typical Capacitance Characteristics Fig 8. Static Drain-Source On-State Resistance vs. Drain Current Fig 9. Static Drain-Source On-State Fig 10. Static Drain-Source On-State Resistance vs. Drain Current Resistance vs. Drain Current Fig 11. Static Drain-Source On-State Fig 12. Static Drain-Source On-State Resistance vs. Drain Current Resistance vs. Drain Current 120 160 200 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 10000 0.001 0.01 0.1 1 I D , Drain Current (A) RDS(ON) (m V GS =2.5V T j = 125 o C T j = 75 o C T j = 25 o C T j = -25 o C 100 1000 10000 0.001 0.01 0.1 1 I D , Drain Current (A) RDS(ON) (m V GS =1.8V T j = 125 o C T j = 75 o C T j = 25 o C T j = -25 o C 100 1000 10000 0.001 0.01 0.1 1 I D , Drain Current (A) RDS(ON) (m V GS =1.5V T j = 125 o C T j = 75 o C T j = 25 o C T j = -25 o C 100 1000 10000 0.001 0.01 0.1 1 I D , Drain Current (A) RDS(ON) (m V GS =1.2V T j = 125 o C T j = 75 o C T j = 25 o C T j = -25 o C 100 1000 10000 0.001 0.01 0.1 1 I D , Drain Current (A) RDS(ON) (m V GS =4.0V T j = 125 o C T j = 75 o C T j = 25 o C T j = -25 o C

Part Number : A ASS Date Code : SS SS

Package Outline : SOT-723 Millimeters MIN NOM MAX A 0.34 0.44 0.54 A1 0.00 0.03 0.05 b 0.17 0.22 0.27 b1 0.22 0.30 0.37 c 0.01 0.08 0.15 D 1.10 1.20 1.30 E 1.10 1.20 1.30 E1 0.70 0.80 0.90 e 0.80 (Typ) θ 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-723-G-v01 SYMBOLS 7° (ref.) D E1 E A θ e b b C θ ...

SOT-723 FOOTPRINT： Draw No. M1-723-G-v01