XP2N025LN YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS 20V ▼ Lower Gate Charge RDS(ON) 25mΩ ▼ Surface Mount Package ID 3 5.7A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Drain Current3, VGS @ 4.5V 4.6 Pulsed Drain Current1 20 Gate-Source Voltage + 12 Drain Current3, VGS @ 4.5V 5.7 Parameter Rating Drain-Source Voltage 20 202311141YAGEO Halogen-Free Product G D S XP2N025L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S SOT-23S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V VGS=4.5V, ID=5A - - 25 m Ω VGS=2.5V, ID=2.5A - - 39 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance V DS=5V, ID=5A - 30 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS= +12V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=5A - 10 16 nC Qgs Gate-Source Charge V DS=10V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2.5 - nC td(on) Turn-on Delay Time V DS=10V - 7 - ns tr Rise Time I D=1A - 11 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 9- ns tf Fall Time V GS=5V - 5 - ns Ciss Input Capacitance V GS=0V - 800 1280 pF Coss Output Capacitance V DS=10V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=5A, VGS=0V, - 10 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.5 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. Static Drain-Source On-Resistance2RDS(ON)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 3.5V 2.5V V GS =2.0V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 5.0V 4.5V 3.5V 2.5V V GS =2.0V V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D = 250uA 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =5A V GS =4.5V 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = 2.5A T A = 25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =10V 400 800 1200 1600 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja =300℃/W 0.02 Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 02468 1 0 1 2 I D , Drain Current (A) RDS(ON) (m T j =25 o C 2.5V V GS =4.5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =5V T j = -55 o C

Part Number : A25 A25SS Date Code : SS SS

Package Outline : SOT-23S Millimeters MIN NOM MAX A 0.80 1.00 1.20 A1 0.00 － 0.10 A2 0.05 － 0.20 D1 0.30 0.40 0.50 e 1.80 1.90 2.00 D 2.80 2.90 3.10 E 2.10 2.40 2.70 E1 1.20 1.30 1.40 M 0° 5° 10° L 0.20 － 0.60 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-N3MIBF-G-v04 SYMBOLS D E1 E A A2 M M L e D1 D1 ...

SOT-23S FOOTPRINT： Draw No. M1-N3MIBF-G-v04