XP2906EY YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 35mΩ ▼ Surface mount package ID 3 4.7A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Thermal Data Parameter Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage + Drain Current3, VGS @ 4V 4.7 Total Power Dissipation 1.25 Drain Current3, VGS @ 4V 3.8 Pulsed Drain Current1 20 Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 202312011YAGEO Halogen-Free Product D1/D2 D1/D2 SOT-26 XP2906 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range o f power applications. The SOT-26 package is widely used for all commercial- industrial applications. D1/D2

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4V, ID=4A - 27.4 35 m Ω VGS=2.5V, ID=2A - 31.5 40 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 0.5 1 V gfs Forward Transconductance V DS=5V, ID=4A - 19 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=4A - 8.2 13 nC Qgs Gate-Source Charge V DS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2.3 - nC td(on) Turn-on Delay Time V DS=10V - 5 - ns tr Rise Time I D=1A - 10 - ns td(off) Turn-off Delay Time R G=6Ω -2 3- ns tf Fall Time V GS=5V - 5 - ns Ciss Input Capacitance V GS=0V - 560 900 pF Coss Output Capacitance V DS=10V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=4A, VGS=0V, - 12 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t ≦5sec ;180℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 001122 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V V G = 2.0V T A =25 o C 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V V G = 2.0V 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 ℃ 0.6 1.0 1.4 1.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =4A V G =4V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = 1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4A V DS =10V 200 400 600 800 1000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =5V T j = -55 o C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 02468 1 0 1 2 I D , Drain Current (A) RDS(ON) (m T j =25 o C 2.5V V GS =4.0V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Part Number : Z02 Z02SS Date Code : SS SS

Package Outline : SOT-26 Millimeters SYMBOLS MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.40 0.50 E 0.00 0.05 0.10 1.00 1.15 1.30 G － 1.95 (ref.) － I 0.10 0.15 0.20 J 0.30 0.45 0.60 L－ 0.95 (ref.) － H D C B L L G A H 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-Y6-G-v02 E J I

SOT-26 FOOTPRINT： Draw No. M1-Y6-G-v02