XP2535GEY

XP2535GEY YAGEO | Alldatasheet

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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive N-CH BV DSS 20V ▼ Lower Gate Charge RDS(ON) 32mΩ ▼ Fast Switching Performance ID 4.6A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -20V RDS(ON) 80mΩ Description ID -3.1A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage + 8+ 8V ID@TA=25℃ Continuous Drain Current3 4.6 -3.1 A ID@TA=70℃ Continuous Drain Current3 3.7 -2.5 A IDM Pulsed Drain Current1 12 -12 A PD@TA=25℃ Total Power Dissipation 1.13 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 110 ℃/W Halogen-Free Product 202312042YAGEO Parameter Thermal Data XP2535 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for commercial surface mount applications. SOT-26

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=3A - - 32 m Ω VGS=2.5V, ID=2A - - 40 m Ω VGS=1.8V, ID=1A - - 50 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.25 - 1 V gfs Forward Transconductance V DS=5V, ID=3A - 16 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=3A - 9 14.4 nC Qgs Gate-Source Charge V DS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2.5 - nC td(on) Turn-on Delay Time V DS=10V - 6 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 8- ns tf Fall Time V GS=5V - 3 - ns Ciss Input Capacitance V GS=0V - 600 960 pF Coss Output Capacitance V DS=10V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 2.4 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=3A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2A - - 80 m Ω VGS=-2.5V, ID=-1.5A - - 100 m Ω VGS=-1.8V, ID=-1A - - 160 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.25 - -1 V gfs Forward Transconductance V DS=-5V, ID=-2A - 8.5 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=-2A - 8 12.8 nC Qgs Gate-Source Charge V DS=-10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 2 - nC td(on) Turn-on Delay Time V DS=-10V - 7 - ns tr Rise Time I D=-1A - 13 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 3- ns tf Fall Time V GS=-5V - 5.5 - ns Ciss Input Capacitance V GS=0V - 640 1024 pF Coss Output Capacitance V DS=-10V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 8 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-2A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 3.5V 2.5V V G = 1.8V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 5.0V 4.5V 3.5V 2.5V V G =1.8V V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 2A T A = 25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Gate Charge Waveform Temperature 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =1 0V 200 400 600 800 1000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) Q VG 4.5V QGS QGD QG Charge

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -5.0V -4.5V -3.5V -2.5V V G = - 1.8V 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -5.0V -4.5V -3.5V -2.5V V G = -1.8V 100 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -1 A T A =25 o C 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2 A V G = -4.5V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Gate Charge Waveform Temperature 02468 1 0 1 2 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -2A V DS = -10V 200 400 600 800 1000 1 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180oC/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) Q VG -4.5V QGS QGD QG Charge

Part Number : YU YUSS Date Code : SS SS

Package Outline : SOT-26 Millimeters SYMBOLS MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.40 0.50 E 0.00 0.05 0.10 1.00 1.15 1.30 G － 1.95 (ref.) － I 0.10 0.15 0.20 J 0.30 0.45 0.60 L－ 0.95 (ref.) － H D C B L L G A H 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-Y6-G-v02 E J I

SOT-26 FOOTPRINT： Draw No. M1-Y6-G-v02