XP2344GN YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive BVDSS 20V ▼ Lower Gate Charge RDS(ON) 22mΩ ▼ Fast Switching Performance ID 6.4A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Drain Current3, VGS @ 4.5V 5.1 Pulsed Drain Current1 20 Gate-Source Voltage + 8 Drain Current3, VGS @ 4.5V 6.4 Parameter Rating Drain-Source Voltage 20 XP2344GN 202312204YAGEO Halogen-Free Product G D S D G S SOT-23 XP2344 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widel y preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 22 m Ω VGS=2.5V, ID=4A - - 32 m Ω VGS=1.8V, ID=2A - - 40 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.4 - 1 V ID(ON) On state drain current V GS=4.5V, VDS=5V 30 - - A gfs Forward Transconductance V DS=5V, ID=6A - 27 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 10 uA Qg Total Gate Charge I D=6A - 22 35.2 nC Qgs Gate-Source Charge V DS=10V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time V DS=10V - 8 - ns tr Rise Time I D=1A - 11 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 8- ns tf Fall Time V GS=5V - 7 - ns Ciss Input Capacitance V GS=0V - 1520 2430 pF Coss Output Capacitance V DS=10V - 175 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 155 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=6A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 3.5V 2.5V V G =1.8V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 5.0V 4.5V 3.5V 2.5V V G =1.8V V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V GS =4.5V 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Gate Charge Waveform Temperature 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =10V 400 800 1200 1600 2000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 270℃/W 0.02 Q VG 4.5V QGS QGD QG Charge Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Part Number : MN MNSS Date Code : SS SS

Package Outline : SOT-23 Millimeters MIN NOM MAX A 0.90 1.08 1.25 A1 0.00 0.08 0.15 A2 0.08 0.17 0.25 D1 0.30 0.40 0.50 e 1.70 2.00 2.30 D 2.70 2.90 3.10 E 2.40 2.70 3.00 E1 1.40 1.60 1.80 M 0° 5° 10° L 0.30 0.45 0.60 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3.Does not Contain Dam Bar Dimension. Draw No. M1-N3-G-v08-1 SYMBOLS D E1 E e A A2 M M L D1 D1

SOT-23 FOOTPRINT： Draw No. M1-N3-G-v08-1