XP2335YT YAGEO | Alldatasheet

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Technical content

P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Small Size & Lower Profile RDS(ON) 42mΩ ▼ RoHS Compliant & Halogen-Free ID 3 -7.3A

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 40 ℃/W Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range -55 to 150 Drain Current, VGS @ 4.5V3 -5.8 Pulsed Drain Current1 -30 Storage Temperature Range 3.12 -55 to 150 -20 +12 -7.3 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 4.5V3 XP2335YT Rating Halogen-Free Product 202311201YAGEO D D D D S S S G PMPAK® 3x3 G D S XP2335 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. XP2335YT 1

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-6A - - 42 m Ω VGS=-2.5V, ID=-4A - - 65 m Ω VGS=-1.8V, ID=-1A - - 85 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.3 - -1.2 V gfs Forward Transconductance V DS=-5V, ID=-6A - 14 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 0.1 uA Qg Total Gate Charge I D=-6A - 12 19.2 nC Qgs Gate-Source Charge V DS=-10V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 3.5 - nC td(on) Turn-on Delay Time V DS=-10V - 10 - ns tr Rise Time I D=-1A - 17 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 0- ns tf Fall Time V GS=-5V - 40 - ns Ciss Input Capacitance V GS=0V - 1000 1600 pF Coss Output Capacitance V DS=-10V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Rg Gate Resistance f=1.0MHz - 15 30 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.6A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-6A, VGS=0V, - 11 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 85oC at steady state. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XP2335YT 2

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 4 8 12 16 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -5.0V -4.5V -3.5V -2.5V -1.8V V GS = -1.5V T A =25 o C 0369 1 2 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C 120 012345 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 1A T A =25 ℃ 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -6A V GS = -4.5V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D = -250uA -5.0V -4.5V -3.5V -2.5V -1.8V V GS =-1.5V XP2335YT 3

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0 4 8 12 16 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -6A V DS = -10V 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 85℃/W 400 800 1200 1600 2000 1 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 01234 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0.1 0.05 0.02 0.01 XP2335YT 4

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 2335 YWWSSS XP2335YT 5

A 2.90 3.10 3.40 B 2.20 2.45 2.80 e 0.60 0.65 0.70 b2 0.20 0.30 0.40 C 2.90 3.10 3.40 c1 0.10 0.30 0.50 c2 1.20 1.70 2.20 c3 0.10 0.38 0.65 D 0.65 0.80 1.05 d1 0.00 0.10 0.20 E 0.10 0.18 0.25 A1 2.900 3.30 3.600 c4 2.900 3.30 3.600 g 0.20 (ref) Package Outline : PMPAK 3x3 b2e d1D 1c 1 c 2 c 3 B A g c 4C BOTTOM VIEW 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD and Pin contour is for reference, it may has little difference by option. Draw No. M1-YT8-G-v06 E d1D PMPAK-3x3(YT) 6

Draw No. M1-YT8-G-v06 PMPAK3X3 FOOTPRINT： PMPAK-3x3(YT) 7