XP20NA010DP

XP20NA010DP YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 200V ▼ Low On-resistance RDS(ON) 10.9mΩ ▼ Simple Drive Requirement ID 84A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V A ID@TC=100℃ Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W dI/dt Max. Diode Commutation Speed3 A/us EAS Single Pulse Avalanche Energy5 mJ TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.75 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Parameter Rating Halogen-Free Product 166.6 200 +20 320 202503101YAGEO -55 to 150 -55 to 150 100 200 G D S XP20NA010D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popula r package. G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 200 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=80A - - 10.9 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=5V, ID=80A - 100 - S IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge4 ID=40A - 85 136 nC Qgs Gate-Source Charge4 VDS=100V - 30 - nC Qgd Gate-Drain ("Miller") Charge4 VGS=10V - 21 - nC td(on) Turn-on Delay Time4 VDS=100V - 21 - ns tr Rise Time4 ID=40A - 76 - ns td(off) Turn-off Delay Time4 RG=1.6Ω -4 3- ns tf Fall Time4 VGS=10V - 4 - ns Ciss Input Capacitance4 VGS=0V - 5000 8000 pF Coss Output Capacitance4 VDS=100V - 180 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 15 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=80A, VGS=0V - - 1.3 V trr Reverse Recovery Time4 IS=10A, VGS=0V, - 100 - ns Qrr Reverse Recovery Charge4 dI/dt=100A/µs - 500 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.T j=25oC , VDS < 50V , IS < 10A 4.Guaranteed by design. 5.Starting Tj=25oC , VDD=90V , L=1mH , RG=25Ω , VGS=10V , IAS=20A 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. YAGEO XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. YAGEO XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 56789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =80A T C =25 o C 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =80A V GS =10V 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =1mA 160 240 320 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V V GS =6.0V T C =25 o C 120 160 200 048 1 2 1 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V V GS =6.0V T C =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area6 Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 10000 20000 30000 40000 0 60 120 180 240 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss0 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =40A V DS = 100 V 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 100 120 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 120 160 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Normalized BVDSS v.s. Junction Temperature 100 0 20 40 60 80 100 120 I D , Drain Current (A) RDS(ON) (m T j =25 o C 120 160 200 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =10mA V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

Package Outline : TO-220 Millimeters MIN NOM MAX A 4.20 4.50 4.80 b 0.60 0.80 1.00 b1 1.10 1.38 1.80 c 0.30 0.48 0.65 c1 1.10 1.30 1.50 E 9.70 10.00 10.40 E1 7.40 8.30 9.20 e L 12.70 13.60 14.50 L1 2.50 2.75 3.00 L2 1.00 1.40 1.80 L3 2.60 3.35 4.10 L4 14.30 15.15 16.00 L5 6.00 6.40 6.80 2.54 (ref.) SYMBOLS D A φ E G Note 3 Note 3 Note 3 F L5 6.00 6.40 6.80 φ 3.40 3.70 4.00 D 8.30 8.85 9.40 F 1.20 1.41 1.85 G 2.20 2.60 3.00 E2 －－ 11.50 Note: 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD and Pin contour is for reference, it may has little difference by option. b e c L Note 3 F Draw No. M1-P3-G-v10

Draw No. M1-P3-G-v10 TO-220 FOOTPRINT ： 1.7mm 2.54mm 2.54mm 1.1mm