XP162A11 KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 MOSFE T P-Channel MOSFET XP162A11 ■ Features

  • VDS (V) =-30V
  • ID =-2.5 A (VGS =-10V)
  • RDS(ON) ＜ 150mΩ (VGS =-10V)
  • RDS(ON) ＜ 280mΩ (VGS =-4.5V) 1.70 0.1 0.42 0.1 0.46 0.1 SOT-89 Unit:mm 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -2.5 Pulsed Drain Current IDM -10 Reverse Drain Current IDR -2.5 Power Dissipation PD 2 W Thermal Resistance.Junction- to-Ambient RthJA 62.5 ℃/W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V A G D S

www.kexin.com.cn2 MOSF ET P-Channel MOSFET XP162A11 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -10 μA Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±10 μA Gate Cut-off Voltage VGS(off) VGS=-10V , ID=-1mA -1 -2.5 V VGS=-10V, ID=-1.5A 150 VGS=-4.5V, ID=-1.5A 280 Forward Transconductance gFS VDS=-10V, ID=-1.5A 25 S Input Capacitance Ciss 280 Output Capacitance Coss 200 Reverse Transfer Capacitance Crss 90 Turn-On DelayTime td(on) 10 Turn-On Rise Time tr 30 Turn-Off DelayTime td(off) 20 Turn-Off Fall Time tf 35 Diode Forward Voltage VSD IS=-2.5A,VGS=0V -1.1 V pF ns mΩ VGS=-5V, VDS=-10V, ID=-1.5A RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-10V, f=1MHz ■ Typical Characterisitics -10 -5-4-3-2-10 -3V -3.5V -4V -4.5V -10V -5V -10 -6-5-4-3-2-10 )V( sgV:egatloV ecruoS/etaG)V( sdV:egatloV ecruoS/niarD Drain Current:Id (A) Drain Current:Id (A) Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Vds=-10V, Pulse TestTa=25℃, Pulse Test Vgs=-2.5V

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET XP162A11 ■ Typical Characterisitics 0.1 0.2 0.3 0.4 0.5 -10-8-6-4-20 Ta=25℃, Pulse Test -1.5A 0.01 0.1 -10-8-6-4-20 Vgs=-4.5V - 10V Drain/Source On-State Resistance vs. Gate/Source Voltage Id=-2.5A Ta=25℃, Pulse Test Drain/Source On-State Resistance vs. Drain Current :Rds(on) (Ω) )A( dI:tnerruC niarD)V( sgV:egatloV ecruoS/etaG :Rds(on) (Ω) 0.1 0.2 0.3 0.4 0.5 -50 0 50 100 150 Pulse Test -10V -1.5A -1.5A, -2.5A -0.6 -0.4 -0.2 0.2 0.4 0.6 -50 0 50 100 150 Vds=-10V, Id=-1mA Drain/Source On-State Resistance vs. Ambient Temp Gate/Source Cut Off Voltage Variance vs. Ambient Temp. :Vgs(off) Variance (V) Ambient Temp:Topr (℃)Ambient Temp:Topr (℃) :Rds(on) (Ω) Id=-2.5AVgs=-4.5V 100 1000 -30-25-20-15-10-50 Capacitance:C (pF) Coss Ciss Crss 100 1000 -5-4-3-2-10 tr td(on) td(off) tf Switching Time vs. Drain CurrentDrain/Source Voltage vs. Capacitance )A( dI:tnerruC niarD)V( sdV:egatloV ecruoS/niarD Switching Time:t (ns)

www.kexin.com.cn4 MOSFE T P-Channel MOSFET XP162A11 ■ Typical Characterisitics -10 0 2 4 6 8 10 -10 Vgs=0V, 4.5V -4.5V Reverse Drain Current vs. Source/Drain Voltage Reverse Drain Current:Idr (A) Gate/Source Voltage vs. Gate Charge Gate/Source Voltage:Vgs (V) )V( dsV:egatloV niarD/ecruoS)cn( gQ egrahC etaG 0.0001 0.001 0.01 0.1 0010111.010.0100.01000.0 Standardized Transition Thermal Resistance vs. Pulse Width Pulse Width:PW (s) Standardized Transition Thermal Resistance:γs(t) Single Pulse Rth(ch-a)=62.5℃/W, (Implemented on a ceramic PCB)