XP161A1355PR VBSEMI | Alldatasheet

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N-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free  TrenchFET® Power MOSFET

APPLICATIONS

 Load Switches for Portable De vices Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. Maximum under Steady State conditions is 95 °C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a sol dering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.022 at VGS = 4.5 V 6.8 10 nC 0.027 at VGS = 2.5 V 6.0 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe rwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.8a A TC = 70 °C 6 a TA = 25 °C 6.8a, b, c TA = 70 °C 6 a, b, c Pulsed Drain Current IDM 30 Continuous Source-Drain Diode Current TC = 25 °C IS 5.2 TA = 25 °C 2.1b, c Maximum Power Dissipation TC = 25 °C PD 6.3 WTC = 70 °C 4 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)e, f 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c, d t ≤ 5 s R thJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 15 20 RoHS COMPLIANT D G SD E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

Notes: a. Pulse test; pulse wi dth ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless ot herwise noted Parameter Symbol T est Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS /TJ ID = 250 µA 25 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.0 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.6 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Dr ain Current IDSS VDS = 30 V, VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 6.3 A 0.022 0.033 ΩVGS = 2.5 V, ID = 4.5 A 0.030 0.045 Forward Tra nsconductancea gfs VDS = 10 V, ID = 6.3 A 45 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 1200 pFOutput Capacitance Coss 220 Reverse Transfer Capacitance Crss 100 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 6.3 A 22 33 nCVDS = 10 V, VGS = 4.5 V, ID = 6.3 A 10 15 Gate-Source Charge Qgs 2.5 Gate-Drain Charge Qgd 1.7 Gate Resistance Rg f = 1 MHz 2.4 Ω Turn-on Delay Time td(on) VDD = 10 V, RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 35 55 Fall Time tf 12 20 Turn-on Delay Time td(on) VDD = 10 V, RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 12 20 Turn-Off Delay Time td(off) 25 40 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Contin uous Source-Drain Diode Current IS TC = 25 °C 5.2 A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = 6.7 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recover y Time trr IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 20 40 ns Body Diode Reverse Recovery C harge Qrr 10 20 nC Reverse Recover y Fall Time ta 10 ns Reverse Recovery Rise Ti me tb 10 E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless othe rwise noted Output Characteristics On-Resistance vs. Drain Current Gate Cha rge VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 5 thru 3 V VGS = 1.5 V VGS = 2.5V VGS = 1 V 0.016 0.018 0.020 0.022 0.024 0.026 0.028 0.030 0 6 12 18 24 30 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =4 . 5V VGS =2 . 5V 0.032 0 5 10 15 20 25 ID = 6 6.3 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 16 V VDS = 10 V Transfer Characteristics Capacitance On-Resis tance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 0 5 10 15 20 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = 4.5 V, 2.5 VID = 6 6.3 A E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise no ted Source-Drain Diode Forward Voltage Threshold Vo ltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 100 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.010 0.020 0.030 0.040 0.050 012345 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 6.3 A ) W ( r e w o P Time (s) 1 600 0.1 0.01 0.001 10 100 Safe Operating Area, Junction-to-Ambien t VDS - Drain-to-Source Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA = 25 °C Single Pulse BVDSS Limited Limited byR DS(on)* 10 s DC 1m s 100 µs 10 ms 100 ms E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless oth erwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more u s eful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) ID - Drain Current (A) Package Limited Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise no ted Normalized Thermal Transient Impedance, Jun ction-to-Ambient 10 -3 10 -2 1 10 600 10 -110 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) i t c e f f 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Jun ction-to-Foot 10 -3 10 -2 10 10 -110 -4 0.1 0.01 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Square Wave Pulse Duration (s) v i t c e f f E d e z i l a m r o N t n e i s n a r T e e c n a d e p m I l a m r e h T Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches DIM Millimeters I n ches DIM Millimeters Inches Min Max Min Max Min Max Min Max D A C L EH E1 B e E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw XP161A1355PR A ll data sheet.com