XP161 KEXIN | Alldatasheet

Document overview

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Technical content

1www.kexin.com.cn 1.80+0.1 -0.1 4.50+0.1 -0.1 2.50+0.1 -0.1 0.80+0.1 -0.1 4.00+0.1 -0.1 0.53+0.1 -0.10.48+0.1 -0.1 1.50+0.1 -0.1 0.44+0.1 -0.1 2.60+0.1 -0.1 0.40+0.1 -0.1 3.00+0.1 -0.1 SOT-89 Unit: mm 1. Base 2. Collector 3. Emiitter 1. Source 2. Drain 3. Gate 1 2 3

1 Gate

2 Drain

3 Source

■ Features

  • Low on-state resistance : Rds (on) = 0.055Ω ( Vgs = 4.5V ) Rds (on) = 0.095Ω ( Vgs = 2.5V ) Rds (on) = 0.20Ω ( Vgs = 1.5V )
  • Ultra high-speed switching
  • Gate protect diode built-in
  • Driving Voltage : 1.5V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±8 V Drain current (DC) ID 4 A Drain current(pulse) IDP 16 A Power dissipation * PD 2 W Channel temperature Tch 150 ℃ Storage temperature Tstg -55 to +150 ℃ * When implemented on a ceramic PCB ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=20V,VGS=0 10 μA Gate leakage current IGSS VGS=±8V,VDS=0 ±10 μA Gate to source cutoff voltage VGS(off) VDS=10V,ID=1mA 0.5 1.2 V Forward transfer admittance │Yfs│ VDS=10V,ID=2A 10 s VGS=4.5V,ID=2A 0.042 0.055 Ω VGS=2.5V,ID=2A 0.070 0.095 Ω VGS=1.5V,ID=0.5A 0.12 0.20 Ω Input capacitance Ciss 390 pF Output capacitance Coss 210 pF Reverse transfer capacitance Crss 90 pF Turn-on delay time td(on) 10 ns Rise time tr 15 ns Turn-off delay time td(off) 85 ns Fall time tf 45 ns VDS=10V,VGS=0,f=1MHZ ID=2A,VGS(on)=5V,VDD=10V Drain to source on-state resistance RDS(on)