XP15NA011IT

XP15NA011IT YAGEO | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 150V ▼ Simple Drive Requirement RDS(ON) 11mΩ ▼ Lower On-resistance ID 38.8A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Parameter Total Power Dissipation 1.92 Storage Temperature Range Operating Junction Temperature Range -55 to 150 Thermal Data -55 to 150 288 Total Power Dissipation 35.7 Gate-Source Voltage + 20 Pulsed Drain Current1 Drain Current, VGS @ 10V 38.8 Drain Current, VGS @ 10V Parameter Rating Drain-Source Voltage 150 Halogen-Free Product 202311241YAGEO 160 24.5 G D S AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popula r package. G D S XP15NA011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S TO-220CFM-T(IT)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 150 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 11 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=5V, ID=20A - 55 - S IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge4 ID=20A - 67 107 nC Qgs Gate-Source Charge4 VDS=75V - 17 - nC Qgd Gate-Drain ("Miller") Charge4 VGS=10V - 21.5 - nC td(on) Turn-on Delay Time4 VDS=75V - 20 - ns tr Rise Time4 ID=20A - 48 - ns td(off) Turn-off Delay Time4 RG=7.5Ω -6 3- ns tf Fall Time4 VGS=10V - 62 - ns Ciss Input Capacitance4 VGS=0V - 3300 5280 pF Coss Output Capacitance4 VDS=100V - 255 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 20 - pF Rg Gate Resistance f=1.0MHz - 0.7 1.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.3 V trr Reverse Recovery Time4 IS=20A, VGS=0V - 70 - ns Qrr Reverse Recovery Charge4 dI/dt=100A/µs - 200 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω, VGS=10V 4.Guaranteed by design. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 150 180 210 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 9.0V 8.0V 7.0V V GS =6.0V 100 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V V GS =6.0V T C =150 o C 456789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1000 2000 3000 4000 5000 6000 1 21 41 61 81 101 121 141 161 181 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =75V 0.01 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 100 120 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 0 20 40 60 80 100 120 I D , Drain Current (A) RDS(ON) (m T j =25 o C 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

Package Outline : TO-220CFM-T Millimeters MIN NOM MAX A 4.30 4.50 4.70 b 0.54 0.69 0.84 b1 0.99 1.14 1.29 c 0.45 0.62 0.79 D 14.70 15.00 15.30 e E 9.70 10.00 10.30 F 2.50 2.70 2.90 G 6.30 6.70 7.10 L 12.50 13.00 13.50 L1 1.80 2.30 2.80 J 0.10 0.20 -- Q 2.50 2.60 2.90 Q1 2.90 3.10 3.30 φR 3.00 3.20 3.40 α 1.All dimension are in millimeters. 2.Dimension does not include burrs and mold flash/protrusions. 3.The outline schematic is not to scale and slightly different from the actual product appearance. Draw No. M1-IT-3-EF-G-V02 2.54 Ref. SYMBOLS 8.5 Ref. 3.5 Ref. 45˚ Ref. Q c φR e F AE b D L G Jα

Draw No. M1-IT-3-EF-G-V02 TO-220CFM-T FOOTPRINT： 1.8mm 2.54mm 2.54mm 1.15mm ....