XP151A13

XP151A13 KEXIN | Alldatasheet

Document overview

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Technical content

0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain www.kexin.com.cn ■ Features

• Low on-state resistance : DS(on) = 0.1Ω ( VGS = 4.5V ) RDS(on) = 0.14Ω ( VGS = 2.5V ) RDS(on) = 0.25Ω ( VGS = 1.5V )
• Ultra high-speed switching
• Gate Protect Diode Built-in ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 1 A -Pulse IDP 4 A Maximum Power Dissipation * PD 0.5 W Operating Junction and Storage Temperature Range TJ,TSTG - 55 to 150 ℃ Thermal Resistance,Junction-to-Ambient 250 ℃/W * When implemented on a ceramic PCB N-Channel Power ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Zero Gate Voltage Drain Current IDSS VGS = 20V , VDS = 0V 10 μA Gate-Body Leakage IGSS VDS = ±8V , VGS = 0V ±10 μA Gate Source cutoff Voltage Vgs(off) ID=1mA,VDS=10V 0.5 1.2 V VGS = 4.5V , ID =0.5A 0.075 0.1 VGS = 2.5V , ID = 0.5A 0.1 0.14 VGS = 1.5V , ID = 0.1A 0.17 0.25 Forward Transfer Adittance |Yfs| ID=0.5A,VDS=10V 4.2 S Body Drain Diode Forward Voltage VF IF=1A,,VGS=0V 0.8 1.1 V Input Capacitance CISS 220 Output Capacitance COSS 120 Reverse Transfer Capacitance CRSS 45 Turn-On Delay Time td(on) VGS= 5V , ID = 0.5A 10 ns Rise Time tr VDD=10V 15 ns Turn-Off Delay Time td(off) 75 ns Fall Time tf 65 ns pFVDS = 10V , VGS = 0V,f = 1.0MHz Drain-Source On-State Resistance RDS(on) Ω XP151A13 Max Max Max Drain Current MOSFET RθJA R

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