XP133A1235SR ETC1 | Alldatasheet

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u ◆ N-Channel Power MOS FET ■ Applications ◆ DMOS Structure

  • Notebook PCs ◆ Low On-State Resistance : 0.035Ω (max)
  • Cellular and portable phones ◆ Ultra High-Speed Switching
  • On - board power supplies ◆ SOP - 8 Package
  • Li - ion battery systems ◆ Two FET Devices built-in ■ General Description ■ Features The XP133A1235SR is a N-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.035Ω ( Vgs = 4.5V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.048Ω ( Vgs = 2.5V ) Two FET devices are built into the one package. Ultra high-speed switching Because high-speed switching is possible, the IC can be efficiently Operational Voltage : 2.5V set thereby saving energy. High density mounting : SOP - 8 The small SOP-8 package makes high density mounting possible. ■ Pin Configuration ■ Pin Assignment PIN NUMBER PIN NAME Source Gate Source Gate Drain Drain ■ Equivalent Circuit ■ Absolute Maximum Ratings Ta=25OC SYMBOL RATINGS UNITS Vdss V Vgss + 12 V Id A Idp A Idr A Pd W Tch 150 OC Tstg - 55 to 150 OC N - Channel MOS FET ( 2 FET devices built-in ) ( note ) : When implemented on a glass epoxy PCB Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) FUNCTION PARAMETER 5 - 6 7 - 8 SOP - 8 Top View

u ■ Electrical Characteristics DC characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = 20 , Vgs = 0V µA Gate-Source Leakage Current Igss Vgs = ± 12 , Vds = 0V ± 1 µA Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 0.5 1.2 V Drain-Source On-state Resistance Id = 3A , Vgs = 4.5V 0.026 0.035 Ω ( note ) Id = 3A , Vgs = 2.5V 0.035 0.048 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 760 pF Output Capacitance Coss Vds = 10V , Vgs = 0V 430 pF Feedback Capacitance Crss f = 1 MHz 200 pF Switching characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) ns Rise Time tr Vgs = 5V , Id = 3A ns Turn-off Delay Time td ( off ) Vdd = 10V ns Fall Time tf ns Thermal characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a glass epoxy ( channel - surroundings ) resin PCB °C / W 62.5 Rth ( ch - a ) Vf If = 7A , Vgs = 0V V 0.85 1.1 Id = 4A , Vds = 10V | Yfs | Rds ( on ) S

u 0.5 1.5 2.5 Ta=25℃, Pulse Test 4.5V 3.5V Vds=10V, Pulse Test -55℃25℃0 0.02 0.04 0.06 0.08 0.1 Ta=25℃, Pulse Test Id=3A 0.01 0.1 ■ Electrical Characteristics Drain/Source Voltage:Vds (V) Gate/Source Voltage:Vgs (V) Gate/Source Voltage:Vgs (V) Drain Current:Id (A) Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current Drain/Source On State Resistance:Rds(on) (Ω) Drain/Source On State Resistance:Rds(on) (Ω) Vgs=2.5V 4.5V Ta=25℃, Pulse Test Drain Current:Id (A) 2.5V Vgs=1.5V Ta=125℃Drain Current:Id (A) 0.02 0.04 0.06 0.08 0.1 -50 100 150 Ambient Temp. :Topr (℃) -0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 -50 100 150 Ambient Temp. :Topr (℃) Drain/Source On-State Resistance vs. Ambient Temperature Pulse Test Gate/Source Cut-Off Voltage Variance vs. Ambient Temperature Vds=10V, Id=1mA Vgs=2.5V 4.5V 3A, 6A Id=6A Gate/Source Cut-Off Voltage Variance :Vgs(off) Variance (V) Drain/Source On State Resistance:Rds(on) (Ω)

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