XP1334GEU YAGEO | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge BVDSS 20V ▼ Capable of 1.8V Gate Drive RDS(ON) 65mΩ ▼ Optimal DC/DC Battery Application ID 3 2.1A ▼ Halogen Free & RoHS Compliant Product

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 360 ℃/W Parameter Operating Junction Temperature Range -55 to 150 Thermal Data Storage Temperature Range Drain Current3, VGS @ 4.5V 1.7 Pulsed Drain Current1 8 Total Power Dissipation 0.35 -55 to 150 XP1334GEU Parameter Rating Drain Current3, VGS @ 4.5V Halogen-Free Product Drain-Source Voltage 20 Gate-Source Voltage + 8 2.1 202311143YAGEO XP1334 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D G S SOT-323 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=2A - - 65 m Ω VGS=2.5V, ID=1.5A - - 75 m Ω VGS=1.8V, ID=1A - - 85 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1 V gfs Forward Transconductance V DS=5V, ID=2A - 12 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=2A - 9 14.4 nC Qgs Gate-Source Charge V DS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2.5 - nC td(on) Turn-on Delay Time V DS=10V - 6 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 8- ns tf Fall Time V GS=5V - 3 - ns Ciss Input Capacitance V GS=0V - 570 912 pF Coss Output Capacitance V DS=10V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 2.4 4.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=2A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on FR4 board, t ≦ 10 sec. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 011223 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 3.5V 2.5V V GS =1.8V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 5.0V 4.5V 3.5V 2.5V V GS =1.8V T A = 150o C 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2A V GS = 4.5 V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 0V I D =2A 200 400 600 800 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=450℃/W t T Single Pulse 0.01 0.02 0.05 0.1 0.2 Duty factor=0.5 0.01 0.1 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V Operation in this area limited by RDS(ON) T j =-40 o C Q VG 4.5V QGS QGD QG Charge

Part Number : 3U Date Code : SS SS:2004,2008,2012,2016,2020,2024… SS :2003,2007,2011,2015,2019,2023… SS:2002,2006,2010,2014,2018,2022… SS:2001,2005,2009,2013,2017,2021… 3USS

Package Outline : SOT-323(SC-70-3L) Millimeters SYMBOLS MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A2 0.80 0.90 1.00 b 0.00 0.20 0.40 C 0.10 0.18 0.25 e 0.65 REF D 1.80 2.00 2.20 E1 1.75 2.10 2.45 E 1.15 1.25 1.35 E E1 e b A1C A A2 D 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-U3-G-v01 A1C ...

(SC-70-3L) SOT-323(SC-70-3L) FOOTPRINT： Draw No. M1-U3-G-v01