XP12C220JY

XP12C220JY YAGEO | Alldatasheet

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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 120V ▼ Low Gate Charge RDS(ON) 220mΩ ▼ Fast Switching Performance ID 1.7A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -120V RDS(ON) 380mΩ Description ID -1.3A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 120 -120 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ 1.7 -1.3 A ID@TA=70℃ 1.3 -1 A IDM Pulsed Drain Current1 6 -5 A PD@TA=25℃ Total Power Dissipation 1.38 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Drain Current, VGS @ 10V3 202404291YAGEO Parameter Thermal Data Halogen-Free Product Drain Current, VGS @ 10V3 XP12C220 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe r applications. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. 2928-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 120 - - V VGS=10V, ID=1.7A - - 220 m Ω VGS=4.5V, ID=1A - - 280 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.4 - 3 V gfs Forward Transconductance V DS=10V, ID=1.7A - 10 - S IDSS Drain-Source Leakage Current VDS=96V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge4 ID=1.7A - 15 24 nC Qgs Gate-Source Charge4 VDS=60V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge4 VGS=10V - 2.2 - nC td(on) Turn-on Delay Time4 VDS=60V - 7 - ns tr Rise Time4 ID=1A - 4 - ns td(off) Turn-off Delay Time4 RG=3.3Ω -1 9- ns tf Fall Time4 VGS=10V - 7 - ns Ciss Input Capacitance4 VGS=0V - 720 1152 pF Coss Output Capacitance4 VDS=80V - 22 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 15 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.3 V trr Reverse Recovery Time4 IS=1.7A, VGS=0V - 24 - ns Qrr Reverse Recovery Charge4 dI/dt=100A/µs - 23 - nC RDS(ON) Static Drain-Source On-Resistance2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -120 - - V VGS=-10V, ID=-1.2A - - 380 m Ω VGS=-4.5V, ID=-0.6A - - 450 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1.4 - -3 V gfs Forward Transconductance V DS=-10V, ID=-1.2A - 6 - S IDSS Drain-Source Leakage Current VDS=-96V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge4 ID=-1.2A - 21 33.6 nC Qgs Gate-Source Charge4 VDS=-60V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge4 VGS=-10V - 2.7 - nC td(on) Turn-on Delay Time4 VDS=-60V - 10 - ns tr Rise Time4 ID=-1A - 4 - ns td(off) Turn-off Delay Time4 RG=3.3Ω -3 8- ns tf Fall Time4 VGS=-10V - 10 - ns Ciss Input Capacitance4 VGS=0V - 1100 1760 pF Coss Output Capacitance4 VDS=-80V - 28 - pF Crss Reverse Transfer Capacitance4 f=1.0MHz - 20 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.2A, VGS=0V - - -1.3 V trr Reverse Recovery Time4 IS=-1.2A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge4 dI/dt=100A/µs - 23 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Guaranteed by design. 5.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150oC. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. RDS(ON) Static Drain-Source On-Resistance2 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 250 oC/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V GS =4.0V 186 188 190 192 194 196 198 200 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 1A T A = 25 o C 0.2 0.6 1.4 1.8 2.2 2.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1.7A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area5 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 10V Q GS QGD QG Charge 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1.7A V DS =60V 300 600 900 1200 1500 1 21 41 61 81 101 121 141 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 250℃/W t T 0.01

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 200 400 600 800 1000 02468 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS = 10V 0.5 1.5 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =10V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V GS =-4.0V 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -7.0V -6.0V -5.0V V GS =-4.0V 310 320 330 340 350 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -0.6A T A =25 o C 0.2 0.6 1.4 1.8 2.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -1.2A V GS = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area5 Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0 5 10 15 20 25 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1.2A V DS = -60V 200 400 600 800 1000 1200 1400 1600 1 21 41 61 81 101 121 141 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 250℃/W t T 0.01

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 500 1000 1500 2000 02468 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 0.4 0.8 1.2 1.6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -10V

Part Number : YYJ Date Code (YSS) Y：Last Digit Of The Year SS：Sequence

Package Outline : 2928-8 Millimeters MIN NOM MAX 2.50 ---- 3.00 2.30 2.40 2.50 2.65 2.85 3.05 0.30 0.45 0.60 0.93 --- 1.10 0.01 --- 0.10 0.92 --- 1.00 2.95 3.05 3.10 0.25 0.32 0.40 0.10 0.15 0.20 e L E SYMBOLS B C 0.65BSC A D e B 5 6 7 8 D E1 E2 A2 C Note: 1.All Dimensions Are in Millimeters. 2.Package Body Sizes Exclude Mold Flash, Protrusion or Gate Burrs. Mold Flash, Protrusion or Gate Burrs Shall Not Exceed 0.10mm Per Side. 3.Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4.The Package Top May Be Smaller Than The Package Bottom. 5. Dimension"b" Does Not Include Dambar Protrusion. Allowable Damber Protrusion Shall Be 0.08mm Total In Excess Of "b" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. Draw No. M1-Y8-G-v02 A EL C

2928-8 FOOTPRINT： Draw No. M1-Y8-G-v02