XP1043-QH

XP1043-QH MA-COM | Alldatasheet

Document overview

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Technical content

Features

 32 dBm Saturated RF Power  41 dBm Output IP3 Linearity  17 dB Gain Control  On-Chip Power Detector  Lead-Free 4 mm 24-lead PQFN Package  100% RF Testing  RoHS* Compliant and 260°C Reflow Compatible

Description

The XP1043 -QH is a packaged linear power amplifier that operates over the 12.0 -16.0 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on -chip power detector. The device includes on -chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. This device is specially designed for use in Point -to-Point Radio systems for cellular backhaul applications, and is well suited for other telecom applications such as SATCOM and VSAT.

Ordering Information

XP1043-QH-0G00 bulk quantity XP1043-QH-0G0T tape and reel XP1043-QH-EV1 evaluation module Functional Schematic Pin Configuration Pin No. Function Pin No. Function 1-2 Ground 13-14 Not Connected

3 Not Connected 15 RF Output

4 RF Input 16 Not Connected

7 Gate 1 Bias 19 Drain 3 Bias

8 Gate 2 Bias 20 Drain 2 Bias

9 Gate 3 Bias 21 Drain 1 Bias

10 Not Connected 22-23 Ground

11 Pwr Det 24 Not Connected

12 Pwr Det Ref

Absolute Maximum Ratings 1,2 Parameter Absolute Max. Supply Voltage (Vd1,2,3) +8.0 V Supply Current (Id1,2,3) 1500 mA Gate Bias Voltage (Vg1,2,3) -2.4 V Max Power Dissipation (Pdiss) 5.5W RF Input Power +19 dBm Operating Temperature (Ta) -55 °C to +85 °C Storage Temperature (Tstg) -65 °C to +150 °C Channel Temperature (Tch) 165 °C MSL Level (MSL) MSL3 ESD Min.-Machine Model (MM) Class A ESD Min.-Human Body Model (HBM) Class 1A (1) Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power; however, maximum total power dissipated is specified at 5.5 W (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. GND RFIN VD3VD2VD1GND GND nc GND GND GND RFOUT GND nc nc nc GNDnc ncVG1 VG2 VG3 Vdet Vref

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1043-QH ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Electrical Specifications: 12.0-16.0 GHz (Ambient Temperature T = 25°C) Parameter Units Min.3 Typ. Max. Small Signal Gain (S21) dB 19.0 21.5 Input Return Loss (S11) dB 10.0 15.0 Output Return Loss (S22) dB 10.0 10.0 Reverse Isolation (S12) dB 55.0 P1dB dBm 30.0 Psat dBm 31.0 32.0 OIP3 at Pout = 18 dBm per Tone dBm 40.0 41.0 Power Detector Range dB - 37.0 - Drain Bias Voltage (Vd1,2,3) VDC 7.0 7.0 Detector Bias Voltage (Vdet,ref) VDC 5.0 Gate Bias Voltage (Vg1,2,3) VDC -2 -1.0 0.0 Supply Current (Id1) mA 100 200 Supply Current (Id2) mA 200 400 Supply Current (Id3) mA 400 800 3. Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linear ity and power.

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1043-QH ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Recommended Layout Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1043-QH ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves XP1043-QH: S-parameters(dB) vs. Freq (GHz), (VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA) -25 -20 -15 -10 10 11 12 13 14 15 16 17 18 Freq (GHz) S-parameter (dB) S21 S11 S22 XP1043-QH: Pout (dBm) vsPin (dBm) at Room Temp. Vd = 7 V, Iq = 700mA -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Output Power (dBm) Pout, Freq = 12.5 GHz Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz Pout, Freq = 14.0 GHz Pout, Freq = 14.5 GHz Pout, Freq = 15.0 GHz Pout, Freq = 15.5 GHz XP1043-QH: Pout (dBm) vsPin (dBm) at +85 °C. Vd = 7 V, Iq = 700mA -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Output Power (dBm) Pout, Freq = 12.5 GHz Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz Pout, Freq = 14.0 GHz Pout, Freq = 14.5 GHz Pout, Freq = 15.0 GHz Pout, Freq = 15.5 GHz XP1043-QH: V_Detect (mV) vsOutput Power (dBm) Freq = 12.5-15.5 GHz, Temp = -45 to 85 DegreeC 100 1000 10000 0 3 6 9 12 15 18 21 24 27 Output Power (dBm) Detector Voltage = Vref - Vdet (mV) 12.5GHz, 25C 15.5GHz, 25C 12.5GHz, -45C 15.5GHz, -45C 12.5GHz, 85C 15.5GHz, 85C XP1043-QH: C/I3 (dBc) vsPout per Tone (dBm) at Room Temp. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 14 15 16 17 18 19 20 21 22 Output Power (dBm per tone) CI/3 (dBc) CI3, Freq = 12.5 GHz, Temp = 35 C CI3, Freq = 13.5 GHz, Temp = 35 C CI3, Freq = 14.5 GHz, Temp = 35 C CI3, Freq = 15.5 GHz, Temp = 35 C XP1043-QH: C/I3 (dBc) vsPout per Tone (dBm) at at +85 °C. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 14 15 16 17 18 19 20 21 22 Output Power (dBm per tone) CI/3 (dBc) CI3, Freq = 12.5 GHz, Temp = 85 C CI3, Freq = 13.5 GHz, Temp = 85 C CI3, Freq = 14.5 GHz, Temp = 85 C CI3, Freq = 15.5 GHz, Temp = 85 c

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1043-QH ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 MTTF These numbers were calculated based on accelerated life test information and thermal model analysis re- ceived from the fabricating foundry. XP1043-QH-0G00: MTTF hours vs Package Base Temperature Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09 1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14 20 30 40 50 60 70 80 90 100 110 120 130 Package Base Temp (°C) MTTF (hours) XP1043-QH-0G00: Tch vs Package Base Temperature Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA 100 125 150 175 200 225 20 30 40 50 60 70 80 90 100 110 120 130 Package Base Temp (°C) Tch (°C) XP1043-QH-0N00: Operating Power De-rating Curve (continuous) 25 50 75 100 125 150 175 Package Base Temp (ºC) Pdiss (W)

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1043-QH ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias conditions of VD1,2,3 at 7.0V with 100, 200, 400mA respectively. The device can also be safely biased to a maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF power. It is recommended to use ac- tive bias to keep the currents constant in order to maintain the best performance over temperature. Under heavy RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply volt- age available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as possible, with additional 10μF decoupling caps. App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by provid- ing +5V bias and measuring the difference in output voltage with standard op-amp in a differential mode configu- ration. Bias Circuit The output impedance of the bias circuit’s gate output should be small. When in saturation, the gates of the XP1043-QH can draw several mA which may cause ad- verse affects in a gate circuit with high output impedance. It is recommended that an Emitter Follower circuit be used (shown above), which follows the bias circuit’s gate output. This will result in a high-input impedance, low-output im- pedance buffer between the gate output of the bias circuit and the gate input of the XP1043-QH. R -5V To Gate From Bias Circuit Emitter Follower placed between the (gate) output of the bias circuit MMIC gate

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1043-QH ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Lead-Free Package Dimensions/Layout