XP1042-QT_15 MA-COM | Alldatasheet
Document overview
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Technical content
Features
21 dB Small Signal Gain 25 dBm P1dB Compression Point 38 dBm Output IP3 Linearity 17 dB Gain Control with Bias Adjust 3x3mm Standard QFN Package 100% RF Testing RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1042 -QT is a packaged driver amplifier that operates over the 12.0 -16.0 GHz frequency band. The device provides 21 dB gain and 38 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 3x3mm QFN package. The device includes on -chip ESD protection structures and DC by -pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1042-QT is well suited for Point -to-Point Radio, LMDS, SATCOM and VSAT applications.
Ordering Information
XP1042-QT-0G00 bulk quantity XP1042-QT-0G0T tape and reel XP1042-QT-EV1 evaluation module Functional Block Diagram/Board Layout Pin Configuration Pin No. Function Pin No. Function 1-2 Not Connected 10 RF Output
3 RF Input 11-12 Not Connected
4 Not Connected 13 Drain 3 Bias
5 Gate 1 Bias 14 Drain 2 Bias
6 Gate 2 Bias 15 Drain 1 Bias
7 Gate 3 Bias 16 Not Connected
Parameter Absolute Max. Supply Voltage (Vd1,2,3) +8.0 V Supply Current (Id1,2,3) 550 mA Gate Bias Voltage (Vg1,2,3) -2.4 V Max Power Dissipation (Pdiss) 2.8W RF Input Power 15 dBm Operating Temperature (Ta) -55 ºC to +85 ºC Storage Temperature (Tstg) -65 ºC to +165 ºC Channel Temperature (Tch)2 150 ºC ESD Min. - Machine Model (MM) Class A ESD Min. - Human Body Model (HBM) Class 1A MSL Level MSL3 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. RFIn Vg1 Vg3 RFOut nc nc Vg2 nc nc nc nc nc Vd1 Vd2 Vd3 nc
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1042-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Electrical Specifications: 12-16 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Small Signal Gain (S21) dB 19.0 21.0 Input Return Loss (S11) dB 12.0 Output Return Loss (S22) dB 10.0 Reverse Isolation (S12) dB 50.0 NF at Max Gain dB 6.0 8.0 P1dB dB 25.0 OIP3 at Pout = 8 dBm per Tone dBm 36.0 38.0 Drain Bias Voltage (Vd1,2,3) VDC 5 Gate Bias Voltage (Vg1,2,3) VDC -2 -1 Supply Current (Id1) mA 75 125 Supply Current (Id2) mA 75 125 Supply Current (Id3) mA 150 250
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1042-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Typical Performance Curves -20 -15 -10 10 11 12 13 14 15 16 17 18 S21 S11 S22 -15 -10 -5 0 5 10
12.5 GHz
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1042-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabrica ting foundry. 1.E+10 1.E+12 1.E+14 1.E+00 1.E+02 1.E+04 1.E+06 1.E+08 20 30 40 50 60 70 80 90 100 110 120 120 140 160 180 200 100 20 30 40 50 60 70 80 90 100 110 120 1 5 2.5 0.5 1.5 25 50 75 100 125 150 175
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1042-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3 at 5.0V with 125, 125, 250 mA respectively. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is con- trolled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is - 1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as possible, with additional 10μF decoupling caps. Recommended Layout
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Power Amplifier 12.0-16.0 GHz XP1042-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices. Lead-Free Package Dimensions/Layout