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Supply Voltage (Vd1,2,3) Supply Current (Id1,2,3) Gate Bias Voltage (Vg1,2,3) Max Power Dissipation (Pdiss) RF Input Power Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch) +6V 550 mA -3V 3.2W 15 dBm -55 to +85 ºC -65 to 150 ºC -40 to MTTF Graph2 Page 1 of 1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Frequency Range (f ) Small Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) NF at Max Gain P1dB OIP3 at Pout = 8 dBm per Tone Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) Supply Current (Id2) Supply Current (Id3) Units GHz dB dB dB dB dB dB dBm VDC VDC mA mA mA Min. 12.0 19.0 36.0 Typ. 21.0 12.0 10.0 50.0 6.0 25.0 38.0 125 125 250 Max. 16.0 8.0 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1042-BD The XP1042-BD is a linear driver amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 21 dB gain and 38 dBm Output Third Order Intercept Point (OIP3) across the band. The driver amplifier includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the part. The device is manufactured in a high linearity GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1042-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description May 2008 - Rev 05-May-08