XP1027-BD

XP1027-BD MA-COM | Alldatasheet

Document overview

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Technical content

Features

 Ka-Band 4 W Power Amplifier  Balanced Design, Good Input / Output Match  25 dB Small Signal Gain  35 dBm Saturated Output Power  43 dBm Output Third Order Intercept (OIP3)  100% On-Wafer Testing  100% Visual Inspection  RoHS* Compliant and 260°C Reflow Compatible

Description

The XP1027-BD is a three -stage 27 - 31 GHz GaAs MMIC power amplifier that provides 25 dB small signal gain and 35 dBm saturated output power. The device includes Lange couplers to achieve good input/output return loss. Backside via holes and gold metallization to allow die attach with either conductive epoxy or eutectic solder. Passivation protects the die surface. This power amplifier is well suited for millimeter-wave, point -to-point radio, SATCOM, LMDS and VSAT applications.

Ordering Information

XP1027-BD-000V “V” - vacuum release gel packs Functional Diagram Pin Configuration1 Pad Function Description

1 RFIN RF Input

2,14 VG1 Gate Voltage Stage 1 3,13 VD1 Drain Voltage Stage 1 4,12 VG2 Gate Voltage Stage 2 5,11 VD3 Drain Voltage Stage 3 6,10 VG3 Gate Voltage Stage 4 7,9 VD3 Drain Voltage Stage 4

8 RFOUT RF Output

• Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. VG1 RFIN RFOUT VG2 VD1 VD2 VG3 VD3 14 13 12 11 10 9 2 43 5 76 VG1 VG2 VD1 VD2 VG3 VD3 1. Backside metal is RF, DC and thermal ground.

Rev. V2 XP1027-BD 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Electrical Specifications: 27 - 31 GHz, TA = 25°C Parameter Units Min. Typ. Max. Small Signal Gain dB 22 25 - Gain Flatness dB - +/-1 - Input Return Loss dB - 20 - Output Return Loss dB - 20 - Reverse Isolation dB - 50 - P1dB dBm - 34 - Output IP3 dBm - 43 - Saturated POUT, Pulsed PIN dBm 33 35 - Drain Bias Voltage VDC - 5.0 5.8 Gate Bias Voltage VDC -1.0 -0.7 0.0 Supply Current, VD = 5 V, VG = -0.7 V ID1 ID2 ID3 mA - 240 630 1240 300 750 1435 Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage2 +6 VDC Supply Current ID1 ID2 ID3 325 mA 825 mA 1575 mA Gate Bias Voltage -1.5 < Vg < 0 V Input Power +25 dBm Storage Temperature -65°C to +165°C Operating Temperature -55°C to +85°C Channel Temperature3 175°C 2. Under pulsed bias conditions, under CW PSAT conditions further reduction in max supply voltage (~0.5 V) is recommended. 3. Channel temperature should be kept as low as possible to maximize lifetime. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 2 devices.

Rev. V2 XP1027-BD 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical Performance Curves (Test Fixture4) 4. Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out MACOM T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. 25 26 27 28 29 30 31 32 33 Gain (dB) Frequency (GHz) XP1027-BD Vd = 5.0 V, Vg = -0.7 V +85 deg C - 40 deg C +25 deg C -25 -20 -15 -10 25 26 27 28 29 30 31 32 33 Input Return Loss (dB) Frequency (GHz) XP1027-BD Vd = 5.0 V, Vg = -0.7 V +85 deg C -40 deg C +25 deg C -25 -20 -15 -10 25 26 27 28 29 30 31 32 33 Output Return Loss (dB) Frequency (GHz) XP1027-BD Vd = 5.0 V, Vg = -0.7 V +85 deg C -40 deg C +25 deg C 25 26 27 28 29 30 31 32 33 OIP3 (dBm) Frequency (GHz) XP1027-BD Vd = 5.0 V, Total Id = 1080 mA, Pin = -10 dBm/ per tone +85 deg C -40 deg C +25 deg C 25 26 27 28 29 30 31 32 33 Gain (dB) Frequency (GHz) XP1027-BD Vd = 5.0 V, Total Id = 1080 mA, Pin = -10 dBm / tone +85 deg C -40 deg C +25 deg C

Rev. V2 XP1027-BD 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical Performance Curves (Test Fixture5) 5. Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out MACOM T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 OIP3 (dBm) Total Drain Current (mA) XP1027-BD Vd = 5.0 V, Pin = -10 dBm / tone +85 deg C -40 deg C +25 deg C 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 Gain (dB) Total Drain Current (mA) XP1027-BD Vd = 5.0 V, Pin = -10 dBm / tone +85 deg C -40 deg C +25 deg C 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 IIP3 (dBm) Total Drain Current (mA) XP1027-BD Vd = 5.0 V, Pin = -10 dBm / tone +85 deg C -40 deg C +25 deg C

Rev. V2 XP1027-BD 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical Performance Curves 200 400 600 800 1000 1200 1400 1600 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Id1, Id2 and Id3 (mA) Output power (dBm) XP1027-BD Vd = 5.0 V, Vg = -0.7 V, CW Id1 Id2 Id3 27 27.5 28 28.5 29 29.5 30 30.5 31 OP1dB, OP2dB, OP3dB and OP4dB (dBm) Frequency (GHz) XP1027-BD, Vd = 5.0 V, VG = -0.7 V, CW OPndB, n = 1 OPndB, n = 2 OPndB, n = 3 OPndB, n = 4 -15 -10 -5 0 5 10 15 PAE (%), Pout (dBm) and Gain (dB) Input Power (dBm) XP1027-BD Vd = 5.0 V, Vg = -0.7 V, Frequency = 29 GHz, CW Pout PAE Gain 16 18 20 22 24 26 28 30 32 34 36 Gain (dB) Output Power (dBm) XP1027-BD VD = 5.0 V and Vd = 5.5 V, Vg = -0.7 V, Freq = 29 GHz, CW +85 deg C -40 deg C +25 deg C +85 deg C, Vd = 5.5 V -40 deg C, Vd = 5.5 V +25 deg C, Vd = 5.5 V -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Output Power (dBm) Input Power (dBm) XP1027-BD VD = 5.0 V and Vd = 5.5 V, Vg = -0.7 V, Freq = 29 GHz, CW +85 deg C -40 deg C +25 deg C +85 deg C, Vd = 5.5 V -40 deg C, Vd = 5.5 V +25 deg C, Vd = 5.5 V 27 27.5 28 28.5 29 29.5 30 30.5 31 Output P1dB (dBm) Frequency (GHz) XP1027-BD Vd = 5 .0 V and Vd = 5.5 V, Vg = -0.7 V, CW +85 deg C -40 deg C +25 deg C +85 deg C, Vd = 5.5 V -40 deg C, Vd = 5.5 V +25 deg C, Vd = 5.5 V

Rev. V2 XP1027-BD 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical Performance Curves6 6. Test conditions – Measurements are referenced 150 µm in from RF In/Out pad edge. For optimum performance MACOM T-pad transition and tuned output matching network is recommended. For additional information see the MACOM “T-Pad Transition” application note. Contact technical sales for output matching network information. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Output Power (dBm) input Power (dBm) XP1027-BD Vd = 5.5 V, Vg = -1.0 V to -0.6 V, Freq = 29 GHz, Pulsed Vgs = -1 V Vgs = -0.9 V Vgs = -0.8 V Vgs = -0.7 V Vgs = -0.6 V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PAE (%) input Power (dBm) XP1027-BD Vd = 5.5 V, Vg = -1.0 V to -0.6 V, Freq = 29 GHz, Pulsed Vgs = -1 V Vgs = -0.9 V Vgs = -0.8 V Vgs = -0.7 V Vgs = -0.6 V 26 27 28 29 30 31 32 PAE (%) Frequency (GHz) XP1027-BD Vd = 5.0 V and Vd = 5.5 V, Vg = -0.7 V Pin = 13 dBm, Pulsed PAE, Vd = 5 V PAE, Vd = 5.5 V 26 27 28 29 30 31 32 Output Power (dBm) Frequency (GHz) XP1027-BD Vd = 5.0 V and Vd = 5.5 V, Vg = -0.7 V Pin = 13 dBm, Pulsed Pout, Vd = 5 V Pout, Vd = 5.5 V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Gain (dB) Input Power (dBm) XP1027 - BD Vd = 5.5 V, Vg = -1.0 V to -0.6 V, Freq = 29 GHz, Pulsed Vgs = -1 V Vgs = -0.9 V Vgs = -0.8 V Vgs = -0.7 V Vgs = -0.6 V 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Total Current (mA) Output Power (dBm) XP1027-BD Vd = 5.5 V, Vg = -1.0 V to -0.6 V, Freq = 29 GHz Vgs = -1 V Vgs = -0.9 V Vgs = -0.8 V Vgs = -0.7 V Vgs = -0.6 V

Rev. V2 XP1027-BD 7 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical Performance Curves7,8 7. Test conditions – Measurements are referenced 150 µm in from RF In/Out pad edge. For optimum performance MACOM T-pad transition and tuned output matching network is recommended. For additional information see the MACOM “T-Pad Transition” application note. Contact technical sales for output matching network information. 8. Additional Data – The XP1027 device consists of a balanced XP1026 pair. See the XP1026 data sheet for additional data concerning OIP3 control and optimization. 26 27 28 29 30 31 32 OIP3 (dBm) Frequency (GHz) XP1027 - BD, OIP3 vs Frequency, Pin = -5.0 dBm per Tone Vd = 5.0 V, 11 MHz Tone Separation, Room temp Vgs = -1.1 V Vgs = -0.9 V Vgs = -0.7 V 26 27 28 29 30 31 32 OIP5 (dBm) Frequency (GHz) XP1027 - BD, OIP5 vs Frequency, Pin = -5.0 dBm per Tone Vd = 5.0 V, 11 MHz Tone Separation, Room temp Vgs = -1.1 V Vgs = -0.9 V Vgs = -0.7 V 26 27 28 29 30 31 32 OIP7 (dBm) Frequency (GHz) XP1027 - BD, OIP7 vs Frequency, Pin = -5.0 dBm per Tone Vd = 5.0 V, 11 MHz Tone Separation, Room temp Vgs = -1.1 V Vgs = -0.9 V Vgs = -0.7 V 6 8 10 12 14 16 18 20 22 24 26 28 30 OIP3 (dBm) Output Power per Tone (dBm) XP1027 - BD, OIP3 at 29 GHz, Vd = 5.0 V, 11 MHz Tone Spacing, Room temp Vgs = -1.1 V Vgs = -0.9 V Vgs = -0.7 V 10 12 14 16 18 20 22 24 26 28 30 OIP5 (dBm) Output Power per Tone (dBm) XP1027 - BD, OIP5 at 29 GHz, Vd = 5.0 V, 11 MHz Tone Spacing, Room temp Vgs = -1.1 V Vgs = -0.9 V Vgs = -0.7 V 14 16 18 20 22 24 26 28 30 OIP7 (dBm) Output Power per Tone (dBm) XP1027 - BD, OIP7 at 29 GHz, Vd = 5.0 V, 11 MHz Tone Spacing, Room temp Vgs = -1.1 V Vgs = -0.9 V Vgs = -0.7 V

Rev. V2 XP1027-BD 8 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Die Outline 14 13 12 11 2 3 4 5 0.961 (0.038) 1.361 (0.054) 1.761 (0.069) 2.561 (0.101) 2.961 (0.117) 3.361 (0.132) 0.961 (0.038) 1.361 (0.054) 1.761 (0.069) 2.561 (0.101) 2.961 (0.117) 3.361 (0.132) 910 4.000 (0.158) 2.226 (0.088) 1.274 (0.050) 0.0 0.0 3.500 (0.138) NOTES: All Dimensions shown as mm/inches. Bond pad dimensions are shown to center of bond pad. Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Backside is ground. Bond pad and backside metallization are gold. All RF and VD3 bond pads are 0.100 x 0.200 (0.004 x 0.008) VG1 VG2 VD1 VD2 VG3 VD3 VG1 VG2 VD1 VD2 VG3 VD3 RFIN RFOUT

Rev. V2 XP1027-BD 9 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport App Note [1] Biasing - It is recommended to separately bias each amplifier stage V D1 through V D3 at VD (1,2,3) = 5 V with ID1 = 240 mA, I D2 = 630 mA and I D3 = 1240 mA. Separate biasing is recommended if the amplifier is to be used in a linear application or at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current ID (total) = 2110 mA. Linear Applications - For applications where the amplifier is being used in linear operation, where best IM3 (Third -Order Intermod) performance is required at more than 5 dB below P1dB, it is recommended to use active gate biasing to keep the drain currents constant as the RF power and temperature vary; this gives the best performance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature. Saturated Applications - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for drain current growth under this condition to achieve best RF output power and power added efficiency. If the input RF power level will vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes significant. Under this bias condition, gain will then vary with RF drive NOTE - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance. CAUTION - Make sure to properly sequence the applied voltages to ensure negative gate bias (V G1,2,3) is available before applying the positive drain supply (VD1,2,3). It is recommended that the device gates are protected with silicon diodes to limit the applied voltage. Bias Arrangement Layout for reference only – It is recommended to bias output stage from both sides. VG1 RFIN RFOUT VG2 VD1 VD2 VG3 VD3 14 13 12 11 10 9 2 43 5 76 VG1 VG2 VD1 VD2 VG3 VD3

Rev. V2 XP1027-BD 10 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base material stack -up also must be considered for best thermal performance. A well thought out thermal path solution will improve overall device reliability, RF performance and power added efficiency. The photo shows a typical high power amplifier carrier assembly. The material stack -up for this carrier is shown below. This stack -up is highly recommended for most reliable performance however, other materials (i.e. eutectic solder vs. epoxy, copper tungsten/copper MOLY rib, etc.) can be considered/possibly used but only after careful review of material thermal properties, material availability and end application performance requirements. App Note [2] Bias Arrangement - For Individual Stage Bias (recommended for linear/ saturated applications) - Each DC pad (VD1,2,3 and VG1,2,3) needs to have DC bypass capacitance (100 - 200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 µF) is also recommended. All DC pads have been tied together on chip and device can be biased from either side. For Parallel Stage Bias - General Applications - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100 - 200 pF) are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 µF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side. NOTE - In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100 - 200 pF capacitance. Alumina Substrate AuSn Eutectic Solder MOLY Carrier, 25 mil, Au plated MMIC, 4 milDiemat DM6030HK Epoxy, ~1 mil MOLY Rib, 5 mil, Au plated Copper Block