XP1026-BD-000V

XP1026-BD_15 MA-COM | Alldatasheet

Document overview

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Technical content

Features

 Ka-Band 2W Power Amplifier  21.0 dB Small Signal Gain  +33.0 dBm Saturated Output Power  +40.0 dBm Output Third Order Intercept (OIP3)  100% On-Wafer RF, DC and Output Power Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s three stage 27.0 -32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter - wave Point -to-Point Radio, LMDS, SATCOM and VSAT applications.

Ordering Information

XP1026-BD-000V “V” - vacuum release gel paks Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC2 Supply Current (Id1,2,3) 165,415,790 mA Gate Bias Voltage (Vg) +0.3 VDC Input Power (Pin) +22 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to +85 °C Channel Temperature (Tch)1 175 °C 1. Channel temperature directly affects a device's MTTF. Chan- nel temperature should be kept as low as possible to maximize lifetime. 2. Under pulsed bias conditions, under CW Psat conditions fur- ther reduction in max supply voltage (~0.5V) is recommended. Chip Device Layout

27.0-32.0 GHz Rev. V1 XP1026-BD 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Electrical Specifications: 27-32 GHz (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Input Return Loss (S11) dB - 10.0 - Output Return Loss (S22) dB - 15.0 - Small Signal Gain (S21)1 dB - 21.0 - Gain Flatness (S21) dB - +/-1.0 - Reverse Isolation (S12) dB - 50.0 - Output Power for 1 dB Compression (P1dB) dBm - +32.0 - Output Third Order Intercept Point (OIP3) dBm - +40.0 - Saturated Output Power (Psat)1 dBm - +33.0 - Drain Bias Voltage (Vd1,2,3) VDC - +5.5 +5.8 Gate Bias Voltage (Vg1,2,3) VDC -1.2 -0.7 0.0 Supply Current (Id1) (Vd=5.5 V, Vg=-0.7 V Typical) mA - 100 150 Supply Current (Id2) (Vd=5.5 V, Vg=-0.7 V Typical) mA - 250 350 Supply Current (Id3) (Vd=5.5 V, Vg=-0.7 V Typical) mA - 550 750 1. Measured on wafer pulsed

27.0-32.0 GHz Rev. V1 XP1026-BD 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Performance Curves (On-Wafer1) -70 -60 -50 -40 -30 -20 -10 -25 -20 -15 -10 -25 -20 -15 -10 -25 -20 -15 -10 -25 -20 -15 -10 1. Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recom- mended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information.

27.0-32.0 GHz Rev. V1 XP1026-BD 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Performance Curves (On-Wafer1) (cont.) 1. Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recommended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information. Vd=5.0V Vd=5.5V Vd=6.0V 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 PAE, Vd=5.0V PAE, Vd=5.5V PAE, Vd=6.0V Gain, Vd=5.0V Gain, Vd=5.5V Gain, Vd=6.0V Gain PAE 100 200 300 400 500 600 700 800 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Id1, Vd=5.0V Id1, Vd=5.5V Id1, Vd=6.0V Id2, Vd=5.0V Id2, Vd=5.5V Id2, Vd=6.0V Id3, Vd=5.0V Id3, Vd=5.5V Id3, Vd=6.0V

27.0-32.0 GHz Rev. V1 XP1026-BD 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Performance Curves (On-Wafer1) (cont.) 1. Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance M/A-COM Tech T-pad transition and tuned output matching network is recommended. For additional information see the M/A-COM Tech “T-Pad Transition” application note. Contact technical sales for output matching network information. 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29

28 GHz 29 GHz 30 GHz 31 GHz 32 GHz

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Vg=-1.1V, Id1=50mA, Id2=132 mA, Id3=261 mA Vg=-1.0V, Id1=64mA, Id2=139 mA, Id3=334 mA Vg=-0.9V, Id1=80mA, Id2=207 mA, Id3=411 mA Vg=-0.8V, Id1=95mA, Id2=250 mA, Id3=491 mA Vg=-0.7V, Id1=113 mA, Id2=295 mA, Id3=577mA Vg=-0.6V, Id1=131 mA, Id2=342 mA, Id3=662mA

27.0-32.0 GHz Rev. V1 XP1026-BD 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Performance Curves (Text Fixture1) 1. Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out M/A-COM Tech T-Pad transitions and RF ceramic circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed. -45 -40 -35 -30 -25 -20 -15 -10 -45 -40 -35 -30 -25 -20 -15 -10

27.0-32.0 GHz Rev. V1 XP1026-BD 7 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support S-Parameters (On-Wafer1) Typcial S-Parameter Data for XP1026-BD Vd=5.0 V, Id=752 mA Frequency S11 S11 S21 S21 S12 S12 S22 S22 (GHz) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang)( ) ( g) ( g) ( g) ( g) ( g) ( g) ( g) ( g) 1. Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in from RF In/Out pad edge.

27.0-32.0 GHz Rev. V1 XP1026-BD 8 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Mechanical Drawing Bias Arrangement (See App Notes [1], [2] and [3]) Layout for reference only – It is recommended to bias output stage from both sides. 2.00 (0.079) 2 3 4 5 6 7 910111213 0.82 (0.032) 1.22 (0.048) 1.62 (0.064) 2.42 (0.095) 3.22 (0.127) 2.82 (0.111) 2.42 (0.095) 1.62 (0.064) 1.22 (0.048) 0.82 (0.032)0.0 0.0 1.00 (0.039) 2.82 (0.111) 3.22 (0.127) 1.00 (0.039) 3.70 (0.146) (Note:Engineering designator is30SPA0553) Units:millimeters(inches) Bond pad dimensionsare shown to center of bond pad. Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backside isground,Bond Pad/Backside Metallization:Gold Bond pad centersare approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RFIn) Bond Pad #2 (Vg1A) Bond Pad #3 (Vd1A) Bond Pad #4 (Vg2A) Bond Pad #5 (Vd2A) Bond Pad #6 (Vg3A) Bond Pad #7 (Vd3A) Bond Pad #8 (RFOut) Bond Pad #9 (Vd3B) Bond Pad #10 (Vg3B) Bond Pad #11Vd2B) Bond Pad #12 (Vg2B) Bond Pad #13 (Vd1B) Bond Pad #14 (Vg1B) 2 3 4 5 6 7 91011121314 RF In RF Out Vg3 Vg2 Vg1 Vd2 Vd3Vd1

27.0-32.0 GHz Rev. V1 XP1026-BD 9 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MTTF Graphs These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensiv e thermal modeling/finite element analysis done at M/A-COM Tech. The values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. Ultimately bias conditi ons and resulting power dissipation along with the practical aspects, i.e. thermal material stack -up, attach method of die placement are the key parts in determining overall reliability for a specific application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for ad ditional infor- mation. 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 55 65 75 85 95 105 115 125 1.00E+01 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 1.00E+07 55 65 75 85 95 105 115 125 16.0 16.2 16.4 16.6 16.8 17.0 17.2 17.4 17.6 17.8 18.0 18.2 18.4 18.6 18.8 19.0 55 65 75 85 95 105 115 125 130 140 150 160 170 180 190 200 210 220 230 55 65 75 85 95 105 115 125

27.0-32.0 GHz Rev. V1 XP1026-BD 10 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3) =5.5V with Id1=100mA, Id2=250mA and Id3=550mA. Sepa- rate biasing is recommended if the amplifier is to be used in a linear application or at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=900mA. [Linear Applications] - For applications where the ampli- fier is being used in linear operation, where best IM3 (Third- Order Intermod) performance is required at more than 5dB below P1dB, it is also recommended to use active gate biasing to keep the drain currents constant as the RF power and temperature vary; this gives the best per- formance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value re- sistor in series with the drain supply used to sense the current. The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature. [Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and each amplifier stage is best operated at a constant gate voltage. Signifi- cant gate currents will flow at saturation and bias circuitry must allow for drain current growth under this condi- tion to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes significant. Note under this bias condition, gain will then vary with RF drive. NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance. CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3) is available before applying the positive drain supply (Vd1,2,3). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage. App Note [2] Bias Arrangement - [For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads have been tied together on chip and device can be biased from either side. [For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF) are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side. NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance.

27.0-32.0 GHz Rev. V1 XP1026-BD 11 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base material stack-up also must be considered for best thermal per- formance. A well thought out thermal path solution will improve overall device reliability, RF performance and power added efficiency. The photo shows a typical high power ampli- fier carrier assembly. The material stack-up for this carrier is shown below. This stack-up is highly recommended for most reliable performance however, other materials (i.e. eutec- tic solder vs epoxy, copper tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal properties, material availability and end application performance requirements. Copper Block AuSn Eutectic Solder Alumina Substrate Diemat DM6030HKEpoxy, ~1mil MOLYCarrier, 25mil Au plated MOLYRib, 5mil, Au plated MMIC, 4mil

27.0-32.0 GHz Rev. V1 XP1026-BD 12 12 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices.

27.0-32.0 GHz Rev. V1 XP1026-BD 13 13 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A -COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale.