XP1011ALMT YAGEO | Alldatasheet

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Technical content

P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 52mΩ ▼ Low Gate Charge ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W 12.5 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Total Power Dissipation -100 +20 -7.1 -16 Drain Current, VGS @ 10V3 -5.7 Pulsed Drain Current1 -60 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 Drain Current, VGS @ 10V Drain Current, VGS @ 10V Rating Halogen-Free Product -10.1 202311241YAGEO -55 to 150 -55 to 150 G D S XP1011AL series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK ® 5x6 D D D D

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-1mA -100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - - 52 m Ω VGS=-4.5V, ID=-3A - - 72 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1.4 - -3 V gfs Forward Transconductance V DS=-5V, ID=-6A - 15 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 0.1 uA Qg Total Gate Charge2 ID=-6A - 35 56 nC Qgs Gate-Source Charge V DS=-50V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 9 - nC td(on) Turn-on Delay Time V DS=-50V - 13.5 - ns tr Rise Time I D=-1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 7- ns tf Fall Time V GS=-10V - 42 - ns Ciss Input Capacitance V GS=0V - 1530 2448 pF Coss Output Capacitance V DS=-80V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Rg Gate Resistance f=1.0MHz - 2 4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-6A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-6A, VGS=0V, - 71 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 215 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 85 ℃/W on steady state. 4.Starting Tj=25oC , VDD=-50V , L=1mH , RG=25Ω , VGS=10V USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 048 1 2 1 6 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V GS = -4.0V T C =25 o C 048 1 2 1 6 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -6.0V -50V V GS = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -3 A T C = 2 5 o C 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -6A V GS = -10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 0 9 18 27 36 45 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -6A V DS = -50 V 500 1000 1500 2000 2500 1 21 41 61 81 101 121 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A) T j = -55 o C

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 100 200 300 400 500 0 1 02 03 04 05 06 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS =-10V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 1011AL YWWSSS

A 0.90 1.10 1.30 b 0.33 0.41 0.51 C 0.254(Ref.) D1 4.80 4.90 5.10 D2 3.61 4.00 4.40 E 5.80 6.03 6.25 E1 (Ref.) 5.60 5.75 5.90 E2 (Ref.) 3.30 3.55 3.80 e H 0.35 － 0.90 L 0.35 0.55 0.75 L1 0.06 0.13 0.20 0° － 12° 1.All dimension are in millimeters. 2.Dimension does not include burrs and mold flash/protrusions. 3.The outline schematic is not to scale and slightly different from the actual product appearance. Draw No. M1-MT-8-EIFMRL-G-v08 Package Outline : PMPAK 5x6

1.27 BSC

α(Ref.) BACKSIDE VIEW b α(Reference) E1 E L1e H K L C A

(E-TYPE) PMPAK 5X6(E-TYPE) FOOTPRINT： Draw No. M1-MT-8-EIFMRL-G-v08